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  package.80v Datasheet PDF File

For package.80v Found Datasheets File :: 7024    Search Time::4.266ms    
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    IRLI2910

IRF[International Rectifier]
Part No. IRLI2910
OCR Text Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l IRLI2910 HEX...80V, VGS = 0V, TJ = 150C --- --- 100 VGS = 16V nA --- --- -100 VGS = -16V --- --- 140 ID = 29A --- -...
Description HEXFET Power MOSFET

File Size 140.03K  /  8 Page

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    Cystech Electonics Corp...
Part No. MTB028N10RNCQ8
OCR Text ...rated ? pb-free & halogen-free package symbol outline mtb028n10rncq8 sop...80v, v gs =0v i dss - - 25 a v ds =80v, v gs =0v, tj=125 c - 22 28 v gs =10v, i d =4...
Description    N-Channel Enhancement Mode Power MOSFET

File Size 430.39K  /  9 Page

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    IRHG7110SCS

International Rectifier
Part No. IRHG7110SCS
OCR Text ... hermetically sealed ceramic package light weight for footnotes refer to the last page mo-036ab irhg7110 100v, quad n-channel rad-hard ...80v, v gs = 0v 250 v ds = 80v, v gs = 0v, t j =125c i gss gate-to-source leakage forward 100 ...
Description 100V Quad N-Channel MOSFET in a MO-036AB package

File Size 121.16K  /  8 Page

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    IRHG597110SCS

International Rectifier
Part No. IRHG597110SCS
OCR Text ... hermetically sealed ceramic package light weight product summary part number radiation level r ds(on) i d irhg...80v, v gs = 0v -25 v ds = -80v, v gs = 0v, t j =125c i gss gate-to-source leakage forward -10...
Description -100V 100kRad Hi-Rel Quad P -Channel TID Hardened MOSFET in a MO-036AB package

File Size 118.02K  /  8 Page

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    Advanced Power Electronics
Part No. AP18T10GP-HF-3
OCR Text ...) the to-22 0 through-hole package is widely used in co mmercial and industrial applications where a small pcb footprint or an atta...80v, v gs =0v - - 25 ua drain-source leakage current (t j =125 o c) v ds =80v ,v gs =0v - - 250 ua i...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 83.92K  /  5 Page

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    BUK763R8-80E

NXP Semiconductors
Part No. BUK763R8-80E
OCR Text package using trenchmos technology. this product has been designed and qualified to aec q101 standard for use in high performance automoti...80v i d drain current v gs =10v; t mb =25c; see figure 1 [1] - - 120 a p tot total power dissipatio...
Description N-channel TrenchMOS standard level FET

File Size 216.40K  /  14 Page

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