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IBM Microeletronics
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| Part No. |
IBMN325804CT3
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| OCR Text |
...e operation. operating the four memory banks in an interleave fashion allows random access operation to occur at a higher rate than is possi...die revision b preliminary ?ibm corporation. all rights reserved. use is further subject to the prov... |
| Description |
256MbMbit x 8 I/O x 4 BankSynchronous DRAM(256M位（8Mx 8 I/O x 4 组）同步动态RAM)
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| File Size |
667.43K /
66 Page |
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Avant Electronics
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| Part No. |
SBN0080GS02
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| OCR Text |
...2-row x 80-column display data memory
2006 aug 16 2 of 52 data sheet (v6.3) dot-matrix stn lcd driver with 32-row x 80-column sbn16...die. sbn1661g_m02-lqfpg lqfp100 pb-free package. sbn1661g_m02-qfpg qfp 100 pb-free package. sbn1661g... |
| Description |
Dot-matrix STN LCD Driver
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| File Size |
403.94K /
52 Page |
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it Online |
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NEC, Corp.
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| Part No. |
EA-C10
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| OCR Text |
...oute design steps. high density memory analog macro logic function cell-based i/o cells high density cell-based compiled memory gate array p...die mounting was previously necessary. packaging the advanced pad pitch of 40 m allows high-pin-coun... |
| Description |
CMOS Embedded Array (ASIC)(CMOS 嵌入式阵 嵌入式阵列（专用集成电路）的CMOS（嵌入式阵列的CMOS
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| File Size |
54.90K /
8 Page |
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it Online |
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Samsung Electronic
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| Part No. |
KBE00F005A-D411
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| OCR Text |
memory june 2005 1 revision 1.0 mcp specification 512mb nand*2 + 256mb mobile sdram*2 * samsung electronics reserves the right to chang e ...die _ ver 0.1 - 512mb mobile sdram ddp f-die _ ver 1.0 <common> - changed operating temperature ... |
| Description |
512Mb NAND*2 256Mb Mobile SDRAM*2
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| File Size |
1,354.35K /
87 Page |
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it Online |
Download Datasheet |
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