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ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
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| Part No. |
A5355CA 5355
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| OCR Text |
...of the required features for an ionization-type smoke detector. A networking capability allows as many as 125 units to be interconnected so that if any unit senses smoke, all units will sound an alarm. In addition, special features are inco... |
| Description |
SMOKE DETECTOR WITH INTERCONNECT
From old datasheet system
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| File Size |
73.67K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRH9230
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| OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demon... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)
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| File Size |
102.18K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRH9250
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| OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 10 12 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demo... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A)
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| File Size |
101.45K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHE8110 IRHE7110
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| OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET technology, the use... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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| File Size |
314.98K /
12 Page |
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IRF[International Rectifier]
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| Part No. |
IRHF7310SE
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| OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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| File Size |
35.65K /
4 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHI7360SE
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| OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=24.3A)
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| File Size |
83.22K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHI7460SE
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| OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A)
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| File Size |
83.17K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHM7264SE
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| OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.087ohm, Id=35A*)
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| File Size |
91.23K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHM7450SE
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| OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)
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| File Size |
91.39K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHM7C50SE IRHM2C50SE
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| OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
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| File Size |
101.94K /
4 Page |
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it Online |
Download Datasheet |
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