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AN7333S NTE6241 XCF16P KSB794 AD148IV LM224D F2010 B4224
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    LC801-14

Polyfet RF Devices
Part No. LC801-14
OCR Text ...gate voltage relative 0.40 0.10 ids = ma, vgs = 0v v, vgs = 0v ciss crss coss vds = idq = a, vds = v, f = 0.40 bvdss idss drain breakdown voltage v ma pf pf pf common source output capacitance common source feedback capacita...
Description    RF POWER LDMOS TRANSISTOR

File Size 50.66K  /  2 Page

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    HT1919-30A

RFHIC
Part No. HT1919-30A
OCR Text ...y % 25 26 - pout @ average ids ma - 670 710 supply voltage v - -3.0 -2.0 gate bias (vgs1 and vgs2) v 27.5 28 - main bias(vds) caution the drain voltage must be supplied to the device after the gate voltage is supplied...
Description    GaN Hybrid Power Amplifier

File Size 261.96K  /  8 Page

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    F1060

Polyfet RF Devices
Part No. F1060
OCR Text ...ohm amp pf v v pf pf ma ua 0.05 ids = a, vgs = 0v 28.0 vds = v, vgs = 0v vds = 0 v, vgs = 30v 0.1 ids = a, vgs = vds vds = 10v, vgs = 5v vgs = 20v, ids = 4 vgs = 20v, vds = 10v 28.0 vds = v, vgs = 0v, f = 1 mhz a 28.0 vds = v, vgs ...
Description    PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

File Size 37.56K  /  2 Page

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    SQ701

POLYFET[Polyfet RF Devices]
Part No. SQ701
OCR Text ...hm Amp pF pF pF TEST CONDITIONS ids = 20.00 mA, Vgs = 0V Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V ids = 0.10 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, ids = 2.50 A Vgs = 20V, Vds = 10V Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, ...
Description SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

File Size 34.28K  /  2 Page

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    HT1818-30A

RFHIC
Part No. HT1818-30A
OCR Text ...y % 25 26 - pout @ average ids ma - 680 710 supply voltage v - -3.0 -2.0 gate bias (vgs1 and vgs2) v 27.5 28 - main bias(vds) caution the drain voltage must be supplied to the device after the gate voltage is supplied...
Description    GaN Hybrid Power Amplifier

File Size 265.90K  /  8 Page

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    HT1818-15A

RFHIC
Part No. HT1818-15A
OCR Text ... % 22 25 - pout @ average ids ma - 290 - supply voltage v -3.0 -2.0 gate bias (vgs1 and vgs2) v - 28 - main bias(vds) caution the drain voltage must be supplied to the device after the gate voltage is supplied tu...
Description    GaN Hybrid Power Amplifier

File Size 247.21K  /  8 Page

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