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ALQ07 UK721 82C433 R1EX240 TA2058F 75012 27N120BN 12100
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  hc-d Datasheet PDF File

For hc-d Found Datasheets File :: 2379    Search Time::1.609ms    
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    PROM
Pyramid Semiconductor, Corp.
Part No. PYX28C64-25L32M PYX28C64-35CWMB PYX28C64X-30L32MB PYX28C64X-20L32M PYX28C64X-25L32MB PYX28C64-35L32M PYX28C64X-35L32M PYX28C64-30CWM PYX28C64-20L32M PYX28C64-30L32M PYX28C64X-35CWMB PYX28C64X-20L32MB PYX28C64-25CWM PYX28C64X-20CWMB PYX28C64X-25CWMB PYX28C64X-30CWM PYX28C64X-30CWMB PYX28C64-20CWM
OCR Text ...pen ___ 3 250 ma a ___ ce v hc , v cc = max, f = 0, outputs open v in v lc or v in v hc standby power supply current (cmos inpu...d out chip clear v il v h v il x byte write v il v ih v il d in write inhibit x v il xhigh z/d out w...
Description 8K x 8 EEPROM 8K X 8 EEPROM 5V, 250 ns, CDIP28
8K x 8 EEPROM 8K X 8 EEPROM 5V, 200 ns, CDIP28
8K x 8 EEPROM 8K X 8 EEPROM 5V, 300 ns, CDIP28

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    49FCT805PYGPYGBLANK 49FCT805PYGPYGI 49FCT805PYGSOGBLANK 49FCT805PYGSOGI 49FCT805APYGPYGBLANK 49FCT805APYGSOGBLANK 49FCT8

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Integrated Device Technology
Part No. 49FCT805PYGPYGBLANK 49FCT805PYGPYGI 49FCT805PYGSOGBLANK 49FCT805PYGSOGI 49FCT805APYGPYGBLANK 49FCT805APYGSOGBLANK 49FCT805APYGSOGI 49FCT805APYGPYGI IDT49FCT3805AQGI
OCR Text ...wise specified: v lc = 0.2v; v hc = v cc - 0.2v commercial: t a = 0c to +70c, industrial: t a = -40c to +85c, v cc = 5v 5% symbol par...d h n t + i ccd (f o n o ) i cc = quiescent current (i ccl , i cch and i ccz ) ? i cc = p...
Description FAST CMOS BUFFER/CLOCK DRIVER

File Size 64.33K  /  7 Page

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    Integrated Device Technology, Inc.
Part No. IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI IDT71T016SA12BF
OCR Text ... power supply current cs > v hc , outputs open, v dd = max., f = f max (3) 45 40 45 35 35 30 30 ma i sb 1 full standby power supply cu...d industrial temperature ranges ac test conditions ac test loads figure 3. output capacitive derati...
Description 2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位)
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48

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    Integrated Device Technology, Inc.
Integrated Device Techn...
Part No. IDT84036 6116LA15SOGI8 6116LA20SOGI8 6116LA15TPGI8 6116SA20SOGI8 6116SA15TPGI8 6116SA15SOGI8 6116LA25TPGI8 6116LA25SOGI8 6116SA20TPGI8 6116LA20TPGI8 6116SA25SOGI8
OCR Text ... = 5.0v 10%, v lc = 0.2v, v hc = v cc - 0.2v) dc electrical characteristics (v cc = 5.0v 10%) recommended operating temperature and ...d , t n e r r u c s c < v l i , n e p o s t u p t u o v c c f = f , . x a m = x a m ) 2 ( a s5 1 10 ...
Description 5.0V 2K x 8 Asynchronous Static RAM
High-speed access and chip select times

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    NIC COMPONENTS CORP
Part No. NIN-HDR12MTRF NIN-HJ680MTRF NIN-HJ220KTRF NIN-HD680KTRF
OCR Text ...x. 1.40 max. 0.51 0.44 0.15 nin-hc 1008 2.90 max. 2.50 max. 2.03 max. 1.20 0.55 0.15 type l g h nin-hk 1.18 0.36 0.66 nin-hj 1.92 0.64 1.02 ...d (0805) and c (1008) ? high q, high current and high srf characteristics ? both flow and reflow s...
Description 1 ELEMENT, 0.12 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.068 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 0.022 uH, GENERAL PURPOSE INDUCTOR, SMD

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    Q-TECH CORP
Part No. QT3T11M-FREQ1 QT3ZD10M-FREQ2 QT3ZD10M-FREQ1
OCR Text ...se & fall time (tr, tf). t c hc ac l z ttl cmos high speed cmos a dvanced cmos low voltage, 3.3 v special cmos* d = tristate output (add "d" as a suffix to the above listed options) electrical s p ecifications item ttl cmo...
Description CRYSTAL OSCILLATOR, CLOCK, 0.0004 MHz - 7.999 MHz, TTL OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 4 MHz - 15 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 0.00000001 MHz - 3.999 MHz, CMOS OUTPUT

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    P4C187-20CMB P4C187L-25CMB P4C187L-45JMB P4C187-45JC P4C187-45JI P4C187-10JM P4C187-25CI P4C187-15PM P4C187-10LM P4C187-

Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
Part No. P4C187-20CMB P4C187L-25CMB P4C187L-45JMB P4C187-45JC P4C187-45JI P4C187-10JM P4C187-25CI P4C187-15PM P4C187-10LM P4C187-25DI P4C187L-15LMB P4C187-45DI
OCR Text ... 1.0 n/a ma ma ___ ___ ce v hc mil. v cc = max., ind./com?l. f = 0, outputs open v in v...d out to match 166 ? (thevenin resistance). ac test conditions truth table input pulse levels gnd ...
Description ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 25 ns, CDIP22
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 45 ns, PDSO24
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 超高4K的1静态CMOS五羊
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 超高4K的1静CMOS五羊
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 15 ns, QCC22

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