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Part No. |
VFT3045BP-M3/4W
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OCR Text |
...h mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? solder bath temperature 275 c max. 10 s...mode) 150 c t j max. (dc forw ard current) 200 c pin 1 pin 2 tmbs ? ito-220ac vft3045bp 1 2 maxi... |
Description |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
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File Size |
80.11K /
4 Page |
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it Online |
Download Datasheet
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Kersemi Electronic Co., Ltd.
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Part No. |
IRFW630B
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OCR Text |
...gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d =... |
Description |
200V N-Channel MOSFET
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File Size |
1,020.25K /
8 Page |
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it Online |
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VISHAY SEMICONDUCTORS
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Part No. |
IL300-F-X007 VISHAYSEMICONDUCTORS-IL300-F-X016
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OCR Text |
...e is the product of the output forward gain (k2) times the led curren t and photodiode load, r2 (v o = i f x k2 x r2). therefore, the ov...mode. in the photovoltaic mode the diode functions as a current source in parallel with a forward bi... |
Description |
SPECIALTY OPTOELECTRONIC DEVICE
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File Size |
309.49K /
18 Page |
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it Online |
Download Datasheet
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Price and Availability
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