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  eoss Datasheet PDF File

For eoss Found Datasheets File :: 370    Search Time::1.657ms    
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    FMH20N60S1

Fuji Electric
Part No. FMH20N60S1
OCR Text ...2 14 typical coss stored energy eoss [uj] v ds [v] i d [a] 0 1 0 2 0 3 0 4 0 5 0 6 0 0 2 4 6 8 10 q g [nc] typical gate charge characteristics v gs = f(q g ): i d =20a, v dd =480v, t ch =25c v gs [v] 10 -6 10 -5 10 -4 10 -3 10 -2 10 ...
Description N-CHANNEL SILICON POWER MOSFET

File Size 461.72K  /  7 Page

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    IPP65R660CFD IPA65R660CFD IPB65R660CFD IPW65R660CFD IPD65R660CFD IPI65R660CFD

Infineon Technologies AG
Part No. IPP65R660CFD IPA65R660CFD IPB65R660CFD IPW65R660CFD IPD65R660CFD IPI65R660CFD
OCR Text ... to very low fom rdson*qg and eoss ? easy to use/drive ? qualified for industrial grade applications according to jedec 1) ? pb-free plating, halogen free mold compound applications 650v coolmos? cfd is especially su itable for resonan...
Description 650V CoolMOS CFD Power Transistor

File Size 3,917.42K  /  20 Page

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    FCPF190N60E

Fairchild Semiconductor
Part No. FCPF190N60E
OCR Text ... figure 12. eoss vs. drain to source voltage switching capabili ty -80 -40 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 ...
Description 600V N-Channel MOSFET

File Size 228.56K  /  10 Page

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    FCPF190N60 FCP190N60

Fairchild Semiconductor
Part No. FCPF190N60 FCP190N60
OCR Text ... figure 12. eoss vs. drain to source voltage switching capability -80 -40 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 2....
Description 600V N-Channel MOSFET

File Size 309.32K  /  10 Page

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    FCPF260N60E FCP260N60E

Fairchild Semiconductor
Part No. FCPF260N60E FCP260N60E
OCR Text ... figure 12. eoss vs. drain to source voltage switching capability -80 -40 0 40 80 120 160 0.4 0.8 1.2 1.6 2.0 2.4...
Description 600V N-Channel MOSFET

File Size 264.87K  /  10 Page

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    FCPF380N60E FCP380N60E

Fairchild Semiconductor
Part No. FCPF380N60E FCP380N60E
OCR Text ... figure 12. eoss vs. drain to source voltage switching capability -80 -40 0 40 80 120 160 0.4 0.8 1.2 1.6 2.0 2.4...
Description 600V N-Channel MOSFET

File Size 284.10K  /  10 Page

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    FCPF380N60 FCP380N60

Fairchild Semiconductor
Part No. FCPF380N60 FCP380N60
OCR Text ... figure 12. eoss vs. drain to source voltage switching capabilit y -80 -40 0 40 80 120 160 0.5 1.0 1.5 2.0 2.5 *...
Description 600V N-Channel MOSFET

File Size 271.55K  /  10 Page

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    FCPF400N60

Fairchild Semiconductor
Part No. FCPF400N60
OCR Text ... figure 12. eoss vs. drain to source voltage switching capability -80 -40 0 40 80 120 160 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 1ma bv dss , [normaliz...
Description 600V N-Channel MOSFET

File Size 252.48K  /  9 Page

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    FDP030N06B

Fairchild Semiconductor
Part No. FDP030N06B
OCR Text ... figure 11. eoss vs. drain to source voltage figure 12. unclamped inductive ...
Description N-Channel PowerTrench? MOSFET 60V, 195A, 3.1m

File Size 743.33K  /  9 Page

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    FDP045N10A

Fairchild Semiconductor
Part No. FDP045N10A
OCR Text ...ature figure 11. eoss vs. drain to sourece voltag e figure 12. unclamped ind uctive ...
Description N-Channel PowerTrench? MOSFET 100V, 164A, 4.5m

File Size 743.61K  /  10 Page

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