Description |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory(12V,CMOS 512K位整体擦除闪速存储器) IC-512K FLASH MEMORY 4-bit magnitude comparators 16-pdIp 0 to 70 Quad 2-input exclusive-OR gates 14-pdIp 0 to 70 decade Counter 14-SOIC 0 to 70 dual J-K flip-flops with clear 14-pdIp 0 to 70 8-Bit Identity/Magnitude Comparators (p=Q) with Enable 20-SOIC 0 to 70 dual J-K flip-flops with clear 14-SOIC 0 to 70 Quad bistable latches 16-SOIC 0 to 70 dual d-type pos.-edge-triggered flip-flops with preset and clear 14-pdIp 0 to 70 4-bit magnitude comparators 16-SOIC 0 to 70 Quad bistable latches 16-pdIp 0 to 70 dual d-type pos.-edge-triggered flip-flops with preset and clear 14-SO 0 to 70 8-Bit Identity/Magnitude Comparators (p=Q) with Enable 20-SO 0 to 70 dual d-type pos.-edge-triggered flip-flops with preset and clear 14-SSOp 0 to 70 dual d-type pos.-edge-triggered flip-flops with preset and clear 14-SOIC 0 to 70 8-Bit Identity/Magnitude Comparators 20-pdIp 0 to 70 64K X 8 FLASH 12V pROM, 120 ns, pdIp32 8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V pROM, 120 ns, pdIp32 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V pROM, 90 ns, pdSO32 8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V pROM, 120 ns, pQCC32 Quad 2-input exclusive-OR gates 14-SOIC 0 to 70 64K X 8 FLASH 12V pROM, 90 ns, pQCC32 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V pROM, 90 ns, pQCC32 Quad 2-input exclusive-OR gates 14-SO 0 to 70 64K X 8 FLASH 12V pROM, 90 ns, pdIp32 8-Bit Identity/Magnitude Comparators (p=Q) with Enable 20-pdIp 0 to 70 64K X 8 FLASH 12V pROM, 150 ns, pdSO32 ER 14C 14#16 pIN RECp LINE 64K X 8 FLASH 12V pROM, 120 ns, pdSO32
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