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ST Microelectronics
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| Part No. |
STPSC1206
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| OCR Text |
diode features no reverse recovery switching behavior independent of temperature dedicated to pfc boost diode description these diodes are manufa ctured using silicon carbide substrate. this wide bandgap material supports the manufact... |
| Description |
Schottky Barrier 600 V power Schottky silicon carbide diode
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| File Size |
96.78K /
7 Page |
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it Online |
Download Datasheet
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ST Microelectronics
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| Part No. |
STGD10NC60S
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| OCR Text |
... turn-on losses when a typical diode is used in the test circuit in figure 2 . if the igbt is offered in a package with a co-pack diode, the co-pack diode is used as external diode. igbts and diode are at the same temperature 2. turn-o... |
| Description |
10A - 600V Fast IGBT
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| File Size |
276.63K /
12 Page |
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it Online |
Download Datasheet |
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Alpha & Omega Semicondu...
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| Part No. |
AOL1428A
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| OCR Text |
...eliability without notice. body diode reverse recovery charge i f =12.4a, di/dt=500a/ms maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v g... |
| Description |
30V N-Channel MOSFET
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| File Size |
237.59K /
6 Page |
View
it Online |
Download Datasheet |
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