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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4702L AO4702
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| OCR Text |
Diode
General Description The AO4702 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky Diode is ...30V ID = 11A (VGS = 10V) RDS(ON) < 16m (VGS = 10V) RDS(ON) < 25m (VGS = 4.5V) SCHOTTKY VDS (V) = 30V... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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| File Size |
106.28K /
5 Page |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4703L AO4703
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| OCR Text |
Diode
General Description
The AO4703 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is...30V ID = -12A (VGS =- 20V) RDS(ON) < 14m (VGS =- 20V) RDS(ON) < 15m (VGS = -10V) SCHOTTKY VDS (V) = ... |
| Description |
P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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| File Size |
214.66K /
5 Page |
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| Part No. |
IRFB23N15D
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| OCR Text |
...ource voltage 30 v dv/dt peak diode recovery dv/dt ? 4.1 v/ns t j operating junction and -55 to + 175 t stg storage temperature range so...30v gate-to-source reverse leakage CCC CCC -100 na v gs = -30v i gss i dss drain-to-source leakage ... |
| Description |
23 A, 150 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
144.88K /
12 Page |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4709L AO4709
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| OCR Text |
Diode
General Description
The AO4709 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode i...30V ID = -8A (VGS = -10V) RDS(ON) < 33m (VGS = -10V) RDS(ON) < 56m (VGS = -4.5V) SCHOTTKY VDS (V) = ... |
| Description |
P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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| File Size |
191.12K /
5 Page |
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Alpha & Omega Semiconductor...
AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4850
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| OCR Text |
...ce VDS=5V, ID=3.1A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=10mA, VGS=0V VDS=75V, VGS=0V TJ=55...30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 54 24 2.4 5.14 VGS=10V, VDS=30V, ID=3.1A 2.34 0.97 1.18 4 VGS=10V... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
109.46K /
4 Page |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4900AL AO4900A
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| OCR Text |
Diode
General Description
The AO4900A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs ma...30V ID = 6.9A (VGS = 10V) RDS(ON) < 27m (VGS = 10V) RDS(ON) < 32m (VGS = 4.5V) RDS(ON) < 50m (VGS = ... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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| File Size |
114.05K /
5 Page |
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SiliconGear
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| Part No. |
SG4953S
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| OCR Text |
...=-5a - 3 - nc drain-source diode characteristics and maximum ratings parameter symbol conditions min. typ. max. unit drain-so...30v dual p-channel power mosfet ds-sg4953s-04 page: 3 silicongear corporation www. silicongea... |
| Description |
-30V Dual P-Channel Power MOSFET
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| File Size |
382.10K /
7 Page |
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it Online |
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