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  diode-100v Datasheet PDF File

For diode-100v Found Datasheets File :: 11432    Search Time::2.375ms    
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    1EZ150D5 1EZ180D5 1EZ160D5 1EZ200D5 1EZ110D5 1EZ120D5 1EZ130D5 1EZ140D5 1EZ170D5 1EZ190D5

Micro Commercial Compon...
Micro Commercial Components, Corp.
Micro Commercial Components Corp.
MCC[Micro Commercial Components]
http://
Part No. 1EZ150D5 1EZ180D5 1EZ160D5 1EZ200D5 1EZ110D5 1EZ120D5 1EZ130D5 1EZ140D5 1EZ170D5 1EZ190D5
OCR Text ...o c + or - 1 o c, from the diode body. (3) zener impedance (z z ) derivation. the zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zene r current ...
Description Pd=1.0W, Vz=190V zener diode
surface mount silicon Zener diodes 180 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
1.0 W Silicon Zener Diodes 100 to 200 Volts

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    CMT07N60 CMT0760FP

List of Unclassifed Manufacturers
ETC[ETC]
N.A.
Champion Microelectronic Corporation
Part No. CMT07N60 CMT0760FP
OCR Text ...n also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppl...100V, VGS = 10V, IL = 7A, L = 10mH, RG = 25) Thermal Resistance Junction to Case Junction to Ambie...
Description POWER FIELD EFFECT TRANSISTOR

File Size 219.82K  /  7 Page

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    FCP7N60 FCPF7N60

FAIRCHILD[Fairchild Semiconductor]
Part No. FCP7N60 FCPF7N60
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C (Note 2) (Note 1) (Note 1) (Note 3) ...100V VGS, Gate-Source Voltage [V] 10 VDS = 250V VDS = 400V Capacitance [pF] 2000 8...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 799.38K  /  10 Page

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    FQP9N50C FQPF9N50C FQPF9N50CT

FAIRCHILD[Fairchild Semiconductor]
Part No. FQP9N50C FQPF9N50C FQPF9N50CT
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 2) (Note 1) (Note 1) (Note 3) - Derate above 25C...100V VDS = 250V Ciss VGS, Gate-Source Voltage [V] 8 Capacitance [pF] 1200 VDS = 40...
Description 500V N-Channel MOSFET
500V N-Channel Advance Q-FET C-Series

File Size 842.91K  /  10 Page

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    IRF7413 7413

International Rectifier
Part No. IRF7413 7413
OCR Text ...tor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds...100V --- ID = 7.2A ns --- RG = 6.2 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VG...
Description Power MOSFET(Vdss=30V, Id=12A)
Power MOSFET(Vdss=30V/ Id=12A)

File Size 121.55K  /  8 Page

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    IRFL110

IRF[International Rectifier]
Part No. IRFL110
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldewring Temperature, for 10 seconds Max. ...100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V ID = 5.6A VDS = 80V VGS = 10V, Se...
Description Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)

File Size 241.54K  /  8 Page

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    IRFP27N60K

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP27N60K
OCR Text ...age and Current l Enhanced Body Diode dv/dt Capability Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VG...100V 20s PULSE WIDTH 0.01 5.0 7.0 9.0 11.0 13.0 15.0 0.5 0.0 -60 -40 -20 0 20 40 60 80 V G...
Description Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rdson)典\u003d 180mohm,身份证\u003d 27A条)
Power MOSFET(Vdss=600V / Rds(on)typ.=180mohm / Id=27A)

File Size 89.84K  /  8 Page

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    IRFP450B

FAIRCHILD[Fairchild Semiconductor]
Part No. IRFP450B
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) 990 14 20.5 5.5 205 1.64 -55 to +150 300 - Derate ab...100V VDS = 250V 4000 Ciss VGS, Gate-Source Voltage [V] 8 Capacitance [pF] VDS = 40...
Description 500V N-Channel MOSFET

File Size 705.34K  /  8 Page

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    IRFS450B IRFS450 FS450 EA0450M

FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
Part No. IRFS450B IRFS450 FS450 EA0450M
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) 990 9.6 9.6 5.5 96 0.77 -55 to +150 300 - Derate abo...100V VDS = 250V 4000 Ciss VGS, Gate-Source Voltage [V] 8 Capacitance [pF] VDS = 40...
Description Discrete MOSFETs
500V N-Channel MOSFET

File Size 685.08K  /  8 Page

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    IRFS630A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRFS630A
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC) Linear Derating Factor Operating Junction and Storag...100V,ID=9A, RG=12 See Fig 13 VDS=160V,VGS=10V, ID=9A See Fig 6 & Fig 12 45 OO 45 OO Source-Drai...
Description Advanced Power MOSFET

File Size 259.74K  /  7 Page

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For diode-100v Found Datasheets File :: 11432    Search Time::2.375ms    
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