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Silicon Standard
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Part No. |
SSM4507M
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OCR Text |
...f=1.0mhz - 65 - pf source-drain diod e symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-4a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-4a, v gs =0v - 15 - ns q rr reverse recovery charge di/d... |
Description |
COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
358.75K /
7 Page |
View
it Online |
Download Datasheet
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http://
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Part No. |
FCH76N60NF
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OCR Text |
... characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fch76n60nf fch76n60nf to-247 - - 30 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown vo... |
Description |
600V N-Channel MOSFET, FRFET
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File Size |
508.49K /
8 Page |
View
it Online |
Download Datasheet
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Vishay
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Part No. |
SQ3419EEV
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OCR Text |
...oltage gate charge source-drain diod e forward voltage threshold voltage c r ss 0 200 400 600 800 1000 1200 1400 010203040 c i ss c o ss v d s - drain-to- s ource voltage (v) c - capacitance (pf) 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 7... |
Description |
Automotive P-Channel MOSFET
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File Size |
277.83K /
11 Page |
View
it Online |
Download Datasheet
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Price and Availability
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