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  bits 8m Datasheet PDF File

For bits 8m Found Datasheets File :: 1666    Search Time::1.813ms    
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    PD45128163G5-A10LT-9JF PD45128163G5-A10T-9JF PD45128163G5-A75LT-9JF PD45128163G5-A75T-9JF PD45128163G5-A80LT-9JF PD45128

ELPIDA[Elpida Memory]
Part No. PD45128163G5-A10LT-9JF PD45128163G5-A10T-9JF PD45128163G5-A75LT-9JF PD45128163G5-A75T-9JF PD45128163G5-A80LT-9JF PD45128163G5-A80T-9JF PD45128163-T PD45128441G5 PD45128441G5-A10LT-9JF PD45128441G5-A10T-9JF PD45128441G5-A75LT-9JF PD45128441G5-A75T-9JF PD45128441G5-A80LT-9JF PD45128441G5-A80T-9JF PD45128441-T PD45128841G5-A10LT-9JF PD45128841G5-A10T-9JF PD45128841G5-A75LT-9JF PD45128841G5-A75T-9JF PD45128841G5-A80LT-9JF PD45128841G5-A80T-9JF PD45128841-T
OCR Text ... DRAM Memory density 128 : 128m bits Wide temperature range T : -20 to + 85C Low Power Organization 4 : x4 8 : x8 Minimum cycle time 7...8m words x 4 bits x 4 banks VCC NC VCCQ NC DQ0 VSSQ NC NC VCCQ NC DQ1 VSSQ NC VCC NC /WE /CAS /RA...
Description 128m-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)

File Size 687.84K  /  89 Page

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    PD45128163 PD45128163G5-A10-9JF PD45128163G5-A75-9JF PD45128163G5-A75A-9JF PD45128163G5-A75L-9JF PD45128163G5-A80-9JF PD

ELPIDA[Elpida Memory]
Part No. PD45128163 PD45128163G5-A10-9JF PD45128163G5-A75-9JF PD45128163G5-A75A-9JF PD45128163G5-A75L-9JF PD45128163G5-A80-9JF PD45128163G5-A80L-9JF PD45128441 PD45128441G5-A10-9JF PD45128441G5-A75-9JF PD45128441G5-A75A-9JF PD45128441G5-A75L-9JF PD45128441G5-A80-9JF PD45128441G5-A80L-9JF PD45128841 PD45128841G5-A10-9JF PD45128841G5-A75-9JF PD45128841G5-A75A-9JF PD45128841G5-A75L-9JF PD45128841G5-A80-9JF PD45128841G5-A80L-9JF
OCR Text ... DRAM Memory density 128 : 128m bits Low Power Organization 4 : x4 8 : x8 Minimum cycle time 75A 75 80 10 : 7.5 ns (133 MHz @CL=2) : 7...8m words x 4 bits x 4 banks VCC NC VCCQ NC DQ0 VSSQ NC NC VCCQ NC DQ1 VSSQ NC VCC NC /WE /CAS /RA...
Description 128m-bit Synchronous DRAM 4-bank, LVTTL
128m-bit Synchronous DRAM 4-bank LVTTL

File Size 657.36K  /  92 Page

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    MX27C8000A MX27C8000AMC-10 MX27C8000AMC-12 MX27C8000AMC-15 MX27C8000AMC-90 MX27C8000AMI-10 MX27C8000AMI-12 MX27C8000AMI-

Macronix International Co., Ltd.
MCNIX[Macronix International]
Part No. MX27C8000A MX27C8000AMC-10 MX27C8000AMC-12 MX27C8000AMC-15 MX27C8000AMC-90 MX27C8000AMI-10 MX27C8000AMI-12 MX27C8000AMI-15 MX27C8000AMI-90 MX27C8000APC-10 MX27C8000APC-12 MX27C8000APC-15 MX27C8000APC-90 MX27C8000API-10 MX27C8000API-12 MX27C8000API-15 MX27C8000API-90 MX27C8000AQC-10 MX27C8000AQC-12 MX27C8000AQC-15 MX27C8000AQC-90 MX27C8000AQI-10 MX27C8000AQI-12 MX27C8000AQI-15 MX27C8000AQI-90 MX27C8000ATC-10 MX27C8000ATC-12 MX27C8000ATC-15 MX27C8000ATC-90 MX27C8000ATI-10 MX27C8000ATI-12 MX27C8000ATI-15 MX27C8000ATI-90 27C800
OCR Text ...t is organized as 1M words by 8 bits per word, operates from a single +5 volt supply, has a static standby mode, and features fast single ad...8m BIT CELL MAXTRIX X-DECODER PROGRAM VERIFY MODE Verification should be performed on the pro...
Description 8m-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 90 ns, PQCC32
JT 21C 21#16 SKT RECP 1M X 8 OTPROM, 90 ns, PDSO32
Single Output LDO, 100mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 1M X 8 OTPROM, 120 ns, PDSO32
8m-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 120 ns, PQCC32
8m-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 100 ns, PQCC32
8m-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 90 ns, PDIP32

File Size 935.13K  /  15 Page

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    MX27C8000 MX27C8000MC-10 MX27C8000MC-12 MX27C8000MC-15 MX27C8000PC-10 MX27C8000PC-12 MX27C8000PC-15 MX27C8000QC-10 MX27C

Macronix International Co., Ltd.
Part No. MX27C8000 MX27C8000MC-10 MX27C8000MC-12 MX27C8000MC-15 MX27C8000PC-10 MX27C8000PC-12 MX27C8000PC-15 MX27C8000QC-10 MX27C8000QC-12 MX27C8000QC-15 MX27C8000TC-10 MX27C8000TC-12 MX27C8000TC-15 27C800
OCR Text ...t is organized as 1M words by 8 bits per word, operates from a single +5 volt supply, has a static standby mode, and features fast single ad...8m BIT CELL MAXTRIX VCC GND VCC GND P/N: PM00259 1 REV. 3.5, AUG. 20, 2001 MX27C80...
Description 8m-BIT [1M x8] CMOS EPROM

File Size 930.73K  /  15 Page

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    MX27C8100 MX27C8100MC-10 MX27C8100MC-12 MX27C8100MC-15 MX27C8100MC-20 MX27C8100PC-10 MX27C8100PC-12 MX27C8100PC-15 MX27C

MCNIX[Macronix International]
Part No. MX27C8100 MX27C8100MC-10 MX27C8100MC-12 MX27C8100MC-15 MX27C8100MC-20 MX27C8100PC-10 MX27C8100PC-12 MX27C8100PC-15 MX27C8100PC-20
OCR Text ... delivered, the chip has all 8m bits in the "ONE" or HIGH state. "ZEROs" are loaded into the MX27C8100 through the procedure of programming. For programming, the data to be programmed is applied with 16 bits in parallel to the data pins. Vc...
Description 8m-BIT [1M x8/512K x16] CMOS OTP ROM

File Size 494.41K  /  15 Page

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    MX27C8111 MX27C8111MC-10 MX27C8111MC-12 MX27C8111MC-15 MX27C8111MC-90 MX27C8111PC-10 MX27C8111PC-12 MX27C8111PC-15 MX27C

Macronix International Co., Ltd.
MCNIX[Macronix International]
Part No. MX27C8111 MX27C8111MC-10 MX27C8111MC-12 MX27C8111MC-15 MX27C8111MC-90 MX27C8111PC-10 MX27C8111PC-12 MX27C8111PC-15 MX27C8111PC-90
OCR Text ... delivered, the chip has all 8m bits in the "ONE" or HIGH state. "ZEROs" are loaded into the MX27C8111 through the procedure of programming. For programming, the data to be programmed is applied with 16 bits in parallel to the data pins. Vc...
Description 8m-BIT [1M x8/512K x16] CMOS OTP ROM WITH PAGE MODE 512K X 16 OTPROM, 90 ns, PDIP42

File Size 487.33K  /  15 Page

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    LH28F008SC

Sharp Electrionic Components
Part No. LH28F008SC
OCR Text ...ile memory organized as 1M of 8 bits. The 1M of data is arranged in sixteen 64K blocks which are individually erasable, lockable, and unlock...8m (1M x 8) Flash Memory LH28F008SC DQ0 - DQ7 OUTPUT BUFFER INPUT BUFFER IDENTIFIER R...
Description 8m (1M 】 8) Flash Memory

File Size 346.24K  /  38 Page

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    ELPIDA MEMORY INC
Part No. UPD45128441G5-A10L-9JF UPD45128163G5-A10L-9JF
OCR Text ...8 memory density 128 : 128m bits synchronous dram nec memory package g5 : tsop (ii) low voltage a : 3.3 v 0.3 v minimum cycle...8m words 4 bits 4 banks a0 to a13 note : address inputs dq0 to dq3 : data inputs / outp...
Description 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
8m X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54

File Size 707.96K  /  88 Page

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    INFINEON[Infineon Technologies AG]
Part No. HYB39S128800CT-75 HYB39S128160CT-7.5 HYB39S128800CT-7.5 HYB39S128400CT-7 HYB39S128400CT-7.5 HYB39S128400CT-75 HYB39S128400CT-8 HYB39S128800CT-7 HYB39S128800CT-8 HYB39S128160CT-7 HYB39S128160CT-75 HYB39S128160CT-8
OCR Text ...ecture that prefetches multiple bits and then synchronizes the output data to a system clock. The chip is fabricated using the Infineon adva...8m x4 SDRAM PC133-333-520 P-TSOP-54 (400mil) 133 MHz 4B x 8m x4 SDRAM PC100-222-620 P-TSOP-54 (400mi...
Description 128-MBit Synchronous DRAM

File Size 316.21K  /  51 Page

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    NEC Corp.
NEC, Corp.
Part No. UPD29F064115GZ-DB80X-MJH UPD29F064115GZ-DB85X-MJH UPD29F064115GZ-MJH UPD29F064115GZ-EB85X-MJH UPD29F064115F9-EB85X-CD6 UPD29F064115F9-DB85X-CD5 UPD29F064115F9-EB85X-CD5 UPD29F064115F9-DB80X-CD5 UPD29F064115F9-EB90X-CD5 UPD29F064115F9-DB80X-CD6 UPD29F064115F9-DB85X-CD6 UPD29F064115F9-EB90X-CD6 UPD29F064115F9-CD5 UPD29F064115F9-CD6
OCR Text ... memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can be erased at a low voltage (1.65 to 1.95 V, 1.8 to 2.1 V ) ...8m bits, 24M bits, 24M bits and 8m bits. Input /output voltage is supplied to 2.7 to 3.3 V. Because ...
Description Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:150VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:22000uF RoHS Compliant: Yes
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:75VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:22000uF RoHS Compliant: Yes
CONNECTOR ACCESSORY
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:75VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:22000uF RoHS Compliant: Yes 6400CMOS低电压双堆叠式存储器分词6位(字模式)页面模式
64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MODE 6400位CMOS低电压双堆叠式存储器分词6位(字模式)页面模式
4M X 16 FLASH 1.8V PROM, 80 ns, PBGA63

File Size 251.84K  /  32 Page

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