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Alliance Semiconductor
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| Part No. |
AS6UA25617 AS6UA25617-BI AS6UA25617-BC AS6UA25617-TI
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| OCR Text |
...s 4, 5 ub /lb high to high z t bhz 020020020ns4, 5 oe high to output in high z t ohz 020020020ns4, 5 power up time t pu 0 C 0 C 0 C ns 4, 5 power down time t pd C 55 C 70 C 100 ns 4, 5 undefined/dont care falling input rising input t oh t... |
| Description |
1.65V to 3.6V 256K x 16 Intelliwatt low power CMOS SRAM with two chip enables
1.65V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with two chip enables
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| File Size |
119.38K /
9 Page |
 View
it Online |
Download Datasheet
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Samsung Electronic
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| Part No. |
K6F4016R6DFAMILY
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| OCR Text |
... lb disable to high-z output t bhz 0 25 0 25 ns output disable to high-z output t ohz 0 25 0 25 ns output hold from address change t oh 10 - 10 - ns write write cycle time t wc 70 - 85 - ns chip select to end of write t cw 60 - 70 - ns add... |
| Description |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
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| File Size |
167.18K /
9 Page |
View
it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
K6F4016R6CFAMILY
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| OCR Text |
... lb disable to high-z output t bhz 0 25 0 25 ns output disable to high-z output t ohz 0 25 0 25 ns output hold from address change t oh 10 - 10 - ns write write cycle time t wc 70 - 85 - ns chip select to end of write t cw 60 - 70 - ns add... |
| Description |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
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| File Size |
167.02K /
9 Page |
View
it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
K6F4016R4DFAMILY
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| OCR Text |
... lb disable to high-z output t bhz 0 25 0 25 ns output disable to high-z output t ohz 0 25 0 25 ns output hold from address change t oh 10 - 10 - ns write write cycle time t wc 70 - 85 - ns chip select to end of write t cw 60 - 70 - ns add... |
| Description |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
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| File Size |
158.38K /
9 Page |
View
it Online |
Download Datasheet |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KM616V1002B
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| OCR Text |
... lb disable to high-z output t bhz 0 4 0 5 0 6 ns output hold from address change t oh 3 - 3 - 3 - ns output loads(a) d out r l = 50 w z o = 50 w v l = 1.5v 30pf* * capacitive load consists of all components of the test environment.... |
| Description |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作)) 64K的16位高速CMOS静态RAM.3V的工作）4K的16位高速的CMOS静态随机存储器.3V的工作）
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| File Size |
156.76K /
9 Page |
View
it Online |
Download Datasheet |
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Alliance Semiconductor
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| Part No. |
AS7C513
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| OCR Text |
...,5 byte select high to high-z t bhz C 5C6C6C8ns4,5 oe high to output in high z t ohz C 5C6C6C8ns4, 5 power up time t pu 0 C0C0C0Cns4, 5 power down time t pd C 10 C 12 C 15 C 20 ns 4, 5 t oh t aa t rc t oh data out address data valid previo... |
| Description |
5V/3.3V 32x16 CMOS SRAM
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| File Size |
152.65K /
8 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
K6R1004C1D K6R1004C1D-JC12
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| OCR Text |
... lb disable to high-z output t bhz 0 5 0 6 ns output hold from address change t oh 3 - 3 - ns chip selection to power up time t pu 0 - 0 - ns chip selection to power downtime t pd - 10 - 12 ns
preliminary revision 0.2 - 6 - december 2001... |
| Description |
256K X 4 STANDARD SRAM, 12 ns, PDSO32
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
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| File Size |
129.99K /
9 Page |
View
it Online |
Download Datasheet |
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Emerging Memory & Logic Solutions
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| Part No. |
EM621FV16BU
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| OCR Text |
... lb disable to high-z output t bhz 015020025 ns output disable to high-z output t ohz 015020025 ns output hold from address change t oh 10 - 10 - 10 - ns parameter symbol 45ns 55ns 70ns unit min max min max min max write cycle time t wc 45... |
| Description |
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
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| File Size |
303.16K /
11 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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