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base gate Datasheet PDF File

For base gate Found Datasheets File :: 14870 Search Time::2ms
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				DYNEX SEMICONDUCTOR LTD Dynex Semiconductor, Ltd.
Part No.	DIM200PHM33-F000
OCR Text	... Circuit Withstand Isolated MMC base with AlN Substrates High Thermal Cycling Capability * Measured at auxiliary terminals. APPLICATIO...gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ...
Description	Half Bridge IGBT Module 200 A, 3300 V, N-CHANNEL IGBT
File Size	140.00K / 9 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	BCR16HM
OCR Text	...minute, T2 * T1 * G terminal to base V1. gate open. Feb.1999 22.5 MAX T1 TERMINAL INDICATION MITSUBISHI SEMICONDUCTOR TRIAC BCR16HM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS S...
Description	MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
File Size	80.71K / 5 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK954R4-80E
OCR Text	... drain 3 s source mb d mounting base; connected to drain 1 2 m b 3 to-220ab (sot78a) s d g m b b 0 7 6 3. ordering information table 3. orde...gate voltage r gs = 20 k - 80 v t j 175 c; pulsed [1] [2] -15 15 v v gs gate-source voltage t j ...
Description	N-channel TrenchMOS logic level FET
File Size	215.17K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK964R1-40E
OCR Text	... drain 3 s source mb d mounting base; connected to drain m b 1 3 2 d2pak (sot404) s d g m b b 0 7 6 3. ordering information table 3. orderin...gate voltage r gs = 20 k - 40 v t j = 25 c; lifetime = 100 hours -15 15 v v gs gate-source voltage...
Description	N-channel TrenchMOS logic level FET
File Size	208.34K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BLF1043
OCR Text	...ruggedness * Source on mounting base eliminates DC isolators, reducing common mode inductance * Designed for broadband operation (HF to 1 GH...gate source DESCRIPTION 1 APPLICATIONS * Communication transmitter applications in the UHF fre...
Description	UHF power LDMOS transistor
File Size	52.53K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BLF1049
OCR Text	base station LDMOS transistor Product specification Supersedes data of 2001 Dec 05 2003 May 14 Philips Semiconductors Product specifi...gate source; connected to flange DESCRIPTION 1 MBK394 Fig.1 Simplified outline SOT502A . ...
Description	base station LDMOS transistor
File Size	106.44K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BLF4G10S-120 BLF4G10-120
OCR Text	...20 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance RF performa...gate source [1] Simplified outline Symbol BLF4G10-120 (SOT502A) 1 3 2 2 3 sym039 1 ...
Description	UHF power LDMOS transistor From old datasheet system
File Size	106.89K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BLF900S-110 BLF900-110
OCR Text	base station LDMOS transistors Product specification Supersedes data of 2003 Sep 22 2004 Feb 04 Philips Semiconductors Product specif...gate source; connected to flange DESCRIPTION BLF900-110; BLF900S-110 APPLICATIONS * RF power amp...
Description	base station LDMOS transistors UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
File Size	128.64K / 13 Page	View it Online	Download Datasheet

For base gate Found Datasheets File :: 14870 Search Time::2ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |