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S1R72V27 P0102AL HSMS2822 D7402 4HCT86AD 4728A DI101 HSMS2822
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    1PS79SB17 1PS66SB17 1PS76SB17 B17

PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
Part No. 1PS79SB17 1PS66SB17 1PS76SB17 B17
OCR Text ...es Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VR IF continuous reverse voltage continuous forward current Conditions Min Max 4 30 Unit V mA 9397 750 14587 (c) Koninkli...
Description 1PS76SB17; 1PS79SB17; 4 V, 30 mA low C_d Schottky barrier diode
4 V, 30 MA LOW CD SCHOTTKY BARRIER DIODE

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    Vishay
Part No. 232266197003 232266197004 232266197012 232266197011 232266197013
OCR Text ...itable for reflow soldering, in accordance with "CECC 00802". Soldering processes which can be used are reflow (infrared and convection heating) and vapour phase. The maximum temperature of 260 C during 10 s should not be exceeded and no li...
Description Surface Mount PTC Thermistors For Overload Protection

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    BZT03-C18 BZT03-C180 BZT03-C20 BZT03-C200

Philips Semiconductors
Part No. BZT03-C18 BZT03-C180 BZT03-C20 BZT03-C200
OCR Text ...n ammo-pack. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Ptot PARAMETER total power dissipation CONDITIONS Ttp = 25 C; lead length 10 mm; see Fig.2 Tamb = 45 C; see Fig.2; PCB mounted (see Fig.6) ...
Description Voltage regulator diodes

File Size 37.30K  /  9 Page

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    ELPIDA MEMORY INC
Part No. EDE2104AASE-6E-E
OCR Text ... unused pins must be handled in accordance with the related specifications. 3 status before initialization of mos devices power-on does not necessarily define initial status of mos devices. production process of mos does not define the ini...
Description 512M X 4 DDR DRAM, PBGA68

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    BLY87C BLY87

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BLY87C BLY87
OCR Text ...tor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Col...
Description VHF power transistor

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    BZG04 BZG04-180 BZG04-30 BZG04-9V1 BZG04-10 BZG04-100 BZG04-11 BZG04-110 BZG04-12 BZG04-120 BZG04-13 BZG04-130 BZG04-15

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BZG04 BZG04-180 BZG04-30 BZG04-9V1 BZG04-10 BZG04-100 BZG04-11 BZG04-110 BZG04-12 BZG04-120 BZG04-13 BZG04-130 BZG04-15 BZG04-150 BZG04-16 BZG04-160 BZG04-18 BZG04-20 BZG04-200 BZG04-22 BZG04-220 BZG04-24 BZG04-27 BZG04-33 BZG04-36 BZG04-39 BZG04-43 BZG04-47 BZG04-51 BZG04-56 BZG04-62 BZG04-68 BZG04-75 BZG04-82 BZG04-8V2 BZG04-91
OCR Text ... MSA473 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PRSM PARAMETER non-repetitive peak reverse power dissipation storage temperature junction temperature CONDITIONS 10/1000 s exponential puls...
Description Transient voltage suppressor diodes 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
Pin Programmable Precision Voltage Reference; Package: Header; No of Pins: 8; Temperature Range: Commercial
Transient voltage suppressor diodes(瞬变电压抑制二极

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    MAXIM
Part No. ICL7660AMTV_883B
OCR Text ...spection procedures shall be in accordance with MIL-Prf-38535, Appendix A as specified in MilStd-883. Screening shall be in accordance with Method 5004 of Mil-Std-883. Burn-in test Method 1015: 1. Test Condition, A, B, C, or D. 2. TA = +125...
Description SCOPE: SWITCHED-CAPACITOR VOLTAGE CONVERTER

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    BC847DS

NXP Semiconductors
Part No. BC847DS
OCR Text ... zl table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per transistor v cbo collector-base voltage open emitter - 50 v v ceo collector-emitter voltage open ba...
Description 45 V, 100 mA NPN/NPN general-purpose transistor

File Size 95.21K  /  12 Page

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    PHP10N40E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHP10N40E
OCR Text ...TING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain curren...
Description PowerMOS transistors Avalanche energy rated

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