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84a Datasheet PDF File

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				TI store
Part No.	SN74LVU04ADGVRG4
OCR Text	... olp (output ground bounce) <0.8 v at v cc = 3.3 v, t a = 25 c typical v ohv (output v oh undershoot) >2.3 v at v cc = 3.3 v, t a...4a 4y sn54lvu04a ...j or w p ackage sn74lvu04a . . . d, db, dgv, ns, or pw package (top view) 321201...
Description	<font color=red>[Old version datasheet]</font> HEX INVERTERS
File Size	674.12K / 18 Page	View it Online	Download Datasheet

				Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
Part No.	2SJ503 2SJ503TP-FA
OCR Text	... 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 1 2 3 7.5 0.5 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP ...4A ID=-4A, VGS=-10V ID=-2A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified...
Description	TRANSISTOR \| MOSFET \| P-CHANNEL \| 30V V(BR)DSS \| 4A I(D) \| TO-251VAR 晶体管\| MOSFET的\| P通道\| 30V的五（巴西）直\| 4A条（丁）\|51VAR Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管\| MOSFET的\| P通道\| 30V的五（巴西）直\| 4A条（丁）\|52VAR P-Channel Silicon MOSFET DC/DC Converter Applications
File Size	86.59K / 4 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ528 2SJ528L 2SJ528S
OCR Text	...V -6 V -5 V -10 Pulse Test (A) -8 Typical Transfer Characteristics V DS = -10 V Pulse Test I D (A) -8 -3.5 V ID -3 V Drain Current -6 Drain Current -6 -4 -4 Tc = 75 C 25 C -25 C -2 VGS = -2.5 V -2 ...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	52.33K / 9 Page	View it Online	Download Datasheet

				ZP Semiconductor
Part No.	PMV33UPE
OCR Text	...--20v v gs gate-source voltage -8 - 8 v i d drain current v gs =-4.5v; t amb =25c; t 5 s [1] ---5.3a static characteristics r dson drain-...4a v gs =-4.5v; t amb =100c [1] --2.8a i dm peak drain current t amb = 25 c; single pulse; t p 10 s...
Description	20 V, single P-channel Trench MOSFET
File Size	532.68K / 4 Page	View it Online	Download Datasheet

				ZP Semiconductor
Part No.	PMV32UP
OCR Text	.... 1.2 features and benefits ? 1.8 v drain-source on-state resistance rated ? very fast switching ? trench mosfet technology 1.3 application...4a static characteristics r dson drain-source on-state resistance v gs =-4.5v; i d =-2.4a; t j =2...
Description	20 V, 4 A P-channel Trench MOSFET
File Size	510.76K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electron...
Part No.	AP2605GY0-HF-16
OCR Text	...ductance v ds =-10v, i d =-3a - 8.6 - s i dss drain-source leakage current v ds =-24v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =-4a - 6.5 10.4 nc q gs gate-source charge v d...
Description	Small Footprint & Low Profile Package
File Size	63.59K / 5 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SJ596 2SJ596TP-FA
OCR Text	...e. 2.3 0.5 0.85 0.7 0.8 1.6 5.5 7.0 1.2 7.5 0.6 0.5 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3...4A ID=-4A, VGS=-10V ID=-2A, VGS=-4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specif...
Description	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 8A I(D) \| TO-252VAR P-Channel Silicon MOSFET DC / DC Converter Applications
File Size	29.85K / 4 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SJ597
OCR Text	...tching. 4V drive. 0.85 0.7 0.8 1.6 1.2 7.5 0.5 0.6 5.5 7.0 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2.3...4A VDS=--10V, VGS=--10V, ID=-4A VDS=--10V, VGS=--10V, ID=-4A IS=--4A, VGS=0 --1.0 2.3 3.2 300 400 27...
Description	P-Channel Silicon MOSFET DC / DC Converter Applications
File Size	30.93K / 4 Page	View it Online	Download Datasheet

				Cystech Electonics Corp...
Part No.	BTB4511J3
OCR Text	...- v i c =-10ma bv ebo -6 -8 - v i e =-100 a i cbo - - -50 na v cb =-100v i cer - - -50 na v ce =-100v, r be 1k i ...4a, i b =-400ma v be(sat) - -990 -1170 mv i c =-4a, i b =-400ma v be(on) - -910 -1160 ...
Description	PNP Epitaxial Planar High Current (High Performance) Transistor
File Size	258.97K / 6 Page	View it Online	Download Datasheet

				ROHM
Part No.	R6004KNDTL
OCR Text	...current, single pulse i as 3 0.8 a avalanche energy, single pulse e as 3 46 mj power dissipation (t c = 25c) p d 58 w junction temperatu...4a - 2.5 - gate - drain charge q gd *6 v gs = 10v - 4.8 - gate plateau voltage v (plateau) v dd ...
Description	Nch 600V 4A Power MOSFET
File Size	1,685.93K / 14 Page	View it Online	Download Datasheet

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