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  7ns Datasheet PDF File

For 7ns Found Datasheets File :: 3002    Search Time::0.938ms    
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    K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60
OCR Text ...o 2.5V. * Changed tCK(max) from 7ns to 10ns. 128M DDR SDRAM Revision 1.2 (July 12, 2001) * Corrected CAS latency of K4D263238M-QC45 from CL3 to CL4 * The specification for the 222MHz/250MHz is preliminary one. Revision 1.1 (March ...
Description 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

File Size 280.12K  /  19 Page

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    MAX9201

Maxim Integrated Products
Part No. MAX9201
OCR Text ...ullups. fast propagation delay (7ns typ at 5mv overdrive) makes these devices ideal for fast a/d converters and sampling circuits, line receivers, v/f converters, and many other data-discrim- ination, signal restoration applications. all co...
Description (MAX9201 - MAX9203) Low-Power Voltage Comparators

File Size 431.70K  /  8 Page

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    Electronic Theatre Controls, Inc.
Part No. IBM0418A81MLAB-4 IBM0418A81MLAB-5 IBM0418A81MLAB-3 IBM0436A81MLAB-3F IBM0436A41MLAB-3F IBM0418A41MLAB-3F IBM0418A81MLAB-3F
OCR Text ... / 3.3ns Cycle 2.0ns Access / 3.7ns Cycle 2.25ns Access / 4.0ns Cycle 2.5ns Access / 5.0ns Cycle 1.8ns Access / 3.0ns Cycle 2.0ns Access / 3.3ns Cycle 2.0ns Access / 3.7ns Cycle 2.25ns Access / 4.0ns Cycle 2.5ns Access / 5.0ns Cycle 1.8ns A...
Description x36 Fast Synchronous SRAM
x18 Fast Synchronous SRAM x18快速同步SRAM

File Size 136.72K  /  25 Page

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    Amphenol, Corp.
Part No. IBM0418A81QLAB-4 IBM0418A81QLAB-3 IBM0418A81QLAB-5 IBM0418A41QLAB-5 IBM0418A41QLAB-3P IBM0418A41QLAB-3F IBM0418A41QLAB-3N IBM0418A41QLAB-4 IBM0436A41QLAB-3F IBM0436A81QLAB-3F
OCR Text ...ed 1.5ns Access / 3.0ns Cycle 1.7ns Access / 3.0ns Cycle 1.8ns Access / 3.3ns Cycle 1.8ns Access / 3.7ns Cycle 2.0ns Access / 4.0ns Cycle 2.25ns Access /5.0ns Cycle 1.5ns Access / 3.0ns Cycle 1.7ns Access / 3.0ns Cycle 1.8ns Access / 3.3ns ...
Description x36 Fast Synchronous SRAM
x18 Fast Synchronous SRAM x18快速同步SRAM

File Size 145.05K  /  26 Page

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    IBM Microeletronics
Part No. IBM0418A81QLAB IBM0418A41QLAB
OCR Text ... 36 256K x 36 256K x 36 Speed 1.7ns Access / 3.0ns Cycle 2.0ns Access / 4.0ns Cycle 2.25ns Access /5.0ns Cycle 1.7ns Access / 3.0ns Cycle 2.0ns Access / 4.0ns Cycle 2.25ns Access /5.0ns Cycle 1.7ns Access / 3.0ns Cycle 2.0ns Access / 4.0ns ...
Description 8Mb (512 x 18) SRAM(8M( 512x 18 ) 同步流水线式高性能CMOS静态RAM)
4Mb (256K x 18) SRAM(4M( 256Kx 18) 同步流水线式高性能CMOS静态RAM)

File Size 20.67K  /  5 Page

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    IBM Microeletronics
International Business Machines, Corp.
Part No. IBM0418A8ACLAB IBM0436A4ACLAB
OCR Text ... 18 512K x 18 512K x 18 Speed 3.7ns Access / 3.8ns Cycle 4.2ns Access / 4.2ns Cycle 4.3ns Access / 4.3ns Cycle 4.5ns Access / 4.5ns Cycle 5.0ns Access / 5.0ns Cycle 5.5ns Access /5.5ns Cycle 3.7ns Access / 3.8ns Cycle 4.2ns Access / 4.2ns C...
Description 8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM)
4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的(128K的36)的SRAMMb的(128K的36)寄存器锁存模式的同步的CMOS静态RAM)的

File Size 29.76K  /  6 Page

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    Samsung Electronic
Part No. K4S56163LC-RFR
OCR Text ...6.5ns in case of -1L part, from 7ns to 7.5ns in case of -15 part. * Change of tOH from 3ns to 3.5ns. * Change V IH min. from 1.44V to 0.8xV DDQ and V OH min. from 1.6V to 0.9xV DDQ Revision 0.3 (October 6. 2001, Preliminary) * Changed D...
Description 4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP Data Sheet

File Size 701.92K  /  49 Page

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    Samsung Electronic
Part No. K4S28163LD-RFR
OCR Text ...6.5ns in case of -1L part, from 7ns to 7.5ns in case of -15 part. * Changed of tOH from 3ns to 2.5ns. * Changed V IH min. from 1.44 V to 0.8xV DDQ and VOH min. from 1.6V to 0.9 x VDDQ. Revision 0.6 (October 10. 2001, Preliminary) * Chan...
Description 2M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet

File Size 97.04K  /  12 Page

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