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INFINEON[Infineon Technologies AG]
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| Part No. |
SKP06N60 SKB06N60 Q67040-S4230 Q67040-S4231
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| OCR Text |
...- Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviou...120V 15V
480V
C, CAPACITANCE
100pF
10V
C oss
5V C rss 0V 0nC 15nC 30nC 45nC 10pF 0... |
| Description |
Fast S-IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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| File Size |
266.40K /
13 Page |
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it Online |
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http://
ADPOW[Advanced Power Technology]
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| Part No. |
APT1201R5B APT1201R5BVR
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| OCR Text |
...
20 VDS=120V VDS=240V 12 VDS=600V 8
16
TJ =+150C 10 5
TJ =+25C
1 .5
4
50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 10A 1.500 Ohm
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| File Size |
63.04K /
4 Page |
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it Online |
Download Datasheet |
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http://
ADPOW[Advanced Power Technology]
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| Part No. |
APT1201R6 APT1201R6B APT1201R6BVR
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| OCR Text |
...150C 10 5
TJ =+25C
12 VDS=600V 8
1 .5
4
50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGU... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 8A 1.600 Ohm
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| File Size |
62.51K /
4 Page |
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it Online |
Download Datasheet |
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Bookly
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| Part No. |
BM02N60
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| OCR Text |
...
Features
* * * * * * 2.0A, 600V, RDS(on) = 4.7 @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching ...120V
10
400
VDS = 300V VDS = 480V
Ciss
VGS , Gate-Source Voltage [V]
8
Capacitanc... |
| Description |
MOSFET
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| File Size |
615.17K /
8 Page |
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it Online |
Download Datasheet |
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Linear Technology, Corp.
Linear Technology Corporation
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| Part No. |
LT1122D LT1122C LT1122B LT1122A LT1122 LT1122CCN8PBF LT1122ACN8PBF
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| OCR Text |
... Max 60V/s Min 14MHz 1.2 MHz 60 600V Max 75pA Max 600pA Max 40pA Max 150pA Max
s s s s s s
s
s
100% Tested Settling Time to 1mV ...120V, and voltage gain of 500,000 also support the 12-bit accurate applications. The input bias curr... |
| Description |
High Speed and Precision Performance, JFET Input Operational Amplifier(?锋?楂????簿瀵???界?缁???烘?搴??杈??杩???惧ぇ?ī
Fast Settling, JFET Input Operational Amplifier; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C OP-AMP, 2000 uV OFFSET-MAX, 13 MHz BAND WIDTH, PDIP8
High Speed and Precision Performance, JFET Input Operational Amplifier(具有高速和精密性能的结型场效应管输入运算放大器)
From old datasheet system
Fast Setting, JFET input Operational Amplifier
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| File Size |
215.01K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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