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EUDYNA[Eudyna Devices Inc]
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Part No. |
FLC257MH-6
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OCR Text |
6
C-Band Power GaAs FET FEATURES
* * * * * High Output Power: P1dB = 34.0dBm(Typ.) High Gain: G1dB = 9.0dB(Typ.) High PAE: add = 36%(Typ.)...10V, IDS = 0.6 IDSS (Typ.), f = 6.4 GHz Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS =600mA VDS ... |
Description |
C-Band Power GaAs FET
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File Size |
87.76K /
4 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
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Part No. |
FK20UM-6
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OCR Text |
6 10.5max. 4.5 1.3 f 3.6 3.2 16 12.5min. 3.8max. 1.0 0.8 2.54 2.54 4.5max. 0.5 2.6 7.0 qwe q gate w drain e source r drain r wr q e v ...10v i d = 10a, v gs = 10v i d = 10a, v gs = 10v i d = 10a, v ds = 10v v ds = 25v, v gs = 0v,... |
Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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File Size |
64.30K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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