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For 500-5000 Found Datasheets File :: 18337    Search Time::1.219ms    
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    2SJ350

HITACHI[Hitachi Semiconductor]
Part No. 2SJ350
OCR Text ...ime trr (ns) Capacitance C (pF) 500 Typical Capacitance vs. Drain to Source Voltage 5000 2000 1000 500 200 100 50 20 10 0 VGS = 0 f = 1 MHz -10 -20 -30 -40 -50 Drain to Source Voltage V DS (V) Crss Coss Ciss 200 100 50 20 di / dt = 50 A ...
Description Silicon P-Channel MOS FET

File Size 46.11K  /  9 Page

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    2SJ387 2SJ387L 2SJ387S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ387 2SJ387L 2SJ387S
OCR Text ...ime trr (ns) Capacitance C (pF) 500 Typical Capacitance vs. Drain to Source Voltage 10000 5000 200 100 50 2000 Ciss 1000 500 200 100 0 -10 -20 -30 Coss 20 10 -0.1 -0.3 -1 -3 -10 -30 -100 Reverse Drain Current I DR (A) di / dt...
Description Silicon P-Channel MOS FET

File Size 46.71K  /  10 Page

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    2SJ399

Hitachi Semiconductor
Part No. 2SJ399
OCR Text ... d(off) tr t d(on) 2000 1000 500 200 100 VGS = -10 V PW = 5 s -0.2 -0.5 -1 -2 Drain Current I D (A) -5 -0.1 Drain to Source Voltage V DS (V) Reverse Drain Current vs. Source to Drain Voltage -0.5 Reverse Drain Current I DR...
Description Silicon P-Channel MOS FET

File Size 36.00K  /  7 Page

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    2SJ471

HITACHI[Hitachi Semiconductor]
Part No. 2SJ471
OCR Text ...0 Channel Dissipation Pch (W) -500 -200 Maximun Safe Operation Area Drain Current I D (A) 10 s 10 PW C D 30 -100 -50 -20 ...5000 2000 1000 500 Crss 200 100 0 VGS = 0 f = 1 MHz -4 -8 -12 -16 -20 Ciss Coss 5 -0.1-0.2 -0.5 -...
Description Silicon P Channel DV-L MOS FET High Speed Power Switching

File Size 46.25K  /  10 Page

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    2SJ483

HITACHI[Hitachi Semiconductor]
Part No. 2SJ483
OCR Text ...ain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 5000 VGS = 0 f = 1 MHz Capacitance C (pF) 200 100 50 2000 1000 Ciss 500 200 Coss 10 di / dt = 20 A / s VGS = 0, Ta = 25 C 100 50 0 -4 -8 -12 -16 -20 Drain to Source Voltage ...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 42.73K  /  9 Page

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    2SJ505 2SJ505L 2SJ505S

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ505 2SJ505L 2SJ505S
OCR Text ... Reverse Recovery Time trr (ns) 500 200 100 50 di / dt = 50 A / s VGS = 0, Ta = 25 C -1 -3 -10 -30 -100 Capacitance C (pF) 50000 20000 10000 5000 2000 1000 500 200 100 0 -10 -20 -30 -40 -50 Drain to Source Voltage V DS (V) Crss Coss Ciss VG...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 53.43K  /  10 Page

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    2SJ506 2SJ506L 2SJ506S

Renesas Electronics, Corp.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ506 2SJ506L 2SJ506S
OCR Text ... 25 C 10 PW 40 Pch (W) -500 -200 I D (A) 30 -100 -50 -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 10 s Channel Dissipation Drain ...5000 2000 50 Capacitance C (pF) 1000 500 200 100 50 20 10 0 -10 -20 -30 -40 -50 Drain to Source Volt...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 49.71K  /  10 Page

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    2SJ528 2SJ528L 2SJ528S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ528 2SJ528L 2SJ528S
OCR Text ...ce Voltage VGS = 0 f = 1 MHz 500 5000 Reverse Recovery Time trr (ns) Capacitance C (pF) 200 100 50 1000 Ciss 300 Coss 100 30 Crss 20 10 5 -0.1 di / dt = 50 A / s VGS = 0, Ta = 25 C -1 -10 -20 -0.3 -3 Reverse Drain Curre...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.33K  /  9 Page

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    2SJ530 2SJ530L 2SJ530S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ530 2SJ530L 2SJ530S
OCR Text ...ce Voltage VGS = 0 f = 1 MHz 500 5000 Reverse Recovery Time trr (ns) Capacitance C (pF) 200 100 50 1000 300 100 30 Ciss Crss 20 10 5 -0.1 di / dt = 50 A / s VGS = 0, Ta = 25 C -0.3 -3 -1 -10 -20 Reverse Drain Curr...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 56.07K  /  9 Page

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    2SJ539

Toshiba Semiconductor
Hitachi Semiconductor
Part No. 2SJ539
OCR Text ... = 1 MHz Capacitance C (pF) 500 Reverse Recovery Time trr (ns) 5000 200 100 50 1000 Ciss 300 Coss 100 30 Crss 20 10 5 -0.1 di / dt = 50 A / s VGS = 0, Ta = 25 C -0.3 -1 -3 -10 -20 I DR (A) 10 0 -10 -20 -30 -40 -50 Drain ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.99K  /  9 Page

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