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  5-cycle Datasheet PDF File

For 5-cycle Found Datasheets File :: 181468    Search Time::2.25ms    
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    HYI25D512160CT-5 HYI25D512160CT-6 HYI25D512160CC-5 HYI25D512160CC-6

Qimonda AG
Part No. HYI25D512160CT-5 HYI25D512160CT-6 HYI25D512160CC-5 HYI25D512160CC-6
OCR Text 5 1 2 - M b i t D o u b l e - D a t a - R a t e SD R A M DDR SDRAM Internet Data Sheet Rev. 1.0 Internet Data Sheet HYI25D512160C[...cycle Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing...
Description 512-Mbit Double-Data-Rate SDRAM

File Size 1,043.59K  /  35 Page

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    ADUC843BCP32Z-5

Analog Devices
Part No. ADUC843BCP32Z-5
OCR Text ...y monitor (PSM) Power Normal: 4.5 mA @ 3 V (core CLK = 2.098 MHz) Power-down: 10 A @ 3 V2 Development tools Low cost, comprehensive developm...cycle 20 MHz 8-bit MCU (8051 instruction set compatible) on a single chip. The ADuC841 and ADuC842 a...
Description Precision Analog Microcontroller: 16MIPS 8052 Flash MCU 8-Ch 12-Bit ADC

File Size 873.93K  /  89 Page

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    M5M4V4265CJ-5 M5M4V4265CJ-5S M5M4V4265CJ-6 M5M4V4265CJ-6S M5M4V4265CJ-7 M5M4V4265CJ-7S M5M4V4265CTP-7S M5M4V4265CJ M5M4V

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M5M4V4265CJ-5 M5M4V4265CJ-5S M5M4V4265CJ-6 M5M4V4265CJ-6S M5M4V4265CJ-7 M5M4V4265CJ-7S M5M4V4265CTP-7S M5M4V4265CJ M5M4V4265CTP-5 M5M4V4265CTP-5S M5M4V4265CTP-6 M5M4V4265CTP-6S M5M4V4265CTP-7 M5M4V4265TP-7S M5M4V4265TP-6S M5M4V4265TP-5S M5M4V4265TP-7 M5M4V4265TP-6 M5M4V4265TP-5
OCR Text 5,-6,-7,-5S,-6S,-7S M5M4V4265CJ,TP-5,-6,-7,-5S,-6S,-7S EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM EDO (HYPER PAG...cycle of 512 cycles every 8.2ms. PIN CONFIGURATION (TOP VIEW) (3.3V)VCC DQ1 DQ2 DQ3 DQ4 (3.3V)...
Description EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM

File Size 308.00K  /  31 Page

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    TE Connectivity, Ltd.
Part No. RP130240-5-12 RP130440-5-12 RP130440-5-24 RP130240-5-24 RP130240-3-12 RP130240-3-05 RP130240-5-05 RP130240-3-24 RP130440-3-24 RP130440-3-05 RP130440-5-05 RP130440-3-12
OCR Text ...Rated operational current: 3 or 5 AACrms * Non-repetitive voltage: Up to 850 Vp * Rated operational voltage: 240 V or 440 VACrms * 5 VDC log...cycle 1/2 cycle RP 130 .40-.-12 8 to 16 VDC 12 VDC 8 VDC 1 VDC 10 mADC 6 VDC 1/2 cycle 1/2 cy...
Description
File Size 82.96K  /  3 Page

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    3M Company
Part No. HM5164400LJ-5 HM5165400LJ-5 HM5165400J-5 HM5164400J-5 HM5164400J-6 HM5165400J-6 HM5164400TT-6
OCR Text ...nformation Type No. HM5164400J-5 HM5164400J-6 HM5164400LJ-5 HM5164400LJ-6 HM5165400J-5 HM5165400J-6 HM5165400LJ-5 HM5165400LJ-6 HM5164400TT...cycle Early write cycle Delayed write cycle Read-modify-write cycle H to L 5$6-only refresh cy...
Description IEC 61754-6; HRS No: 710-0087-3 40; Mating/Unmating Cycles: 500; Operating Temperature Range (degrees C): -25 to 70; Generic Name: MU; General Description: Cap
IEC 61754-6; HRS No: 710-0076-7 00; Insertion Loss (dB): 0.5; Return Loss (dB)(Min.): 40; Generic Name: MU; General Description: Plug insertion/extraction tool
x4 Fast Page Mode DRAM x4快速页面模式的DRAM

File Size 419.54K  /  31 Page

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    Hitachi,Ltd.
Part No. HM5118165LJ-5 HM5118165LJ-7 HM5118165TT-7 HM5118165TT-5 HM5118165TT-6
OCR Text ... It employs the most advanced 0.5 m CMOS technology for high performance and low power. The HM5118165 offers Extended Data Out (EDO) Page Mo...cycle Upper byte Word Lower byte Early write cycle Upper byte Word Lower byte Delayed write cycle Up...
Description 16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh
1M X 16 EDO DRAM, 50 ns, PDSO44
1M X 16 EDO DRAM, 60 ns, PDSO44

File Size 344.20K  /  33 Page

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    Elpida Memory, Inc.
ELPIDA MEMORY INC
Part No. HM5117805LJ-5 HM5117805S-6 HM5117805TT-5 HM5117805TS-5 HM5117805TT-7 HM5117805TS-6 HM5117805S-5 HM5117805LS-6 HM5117805TT-6 HM5117805TS-7 HM5117805LS-5 HM5117805S-7 HM5117805LS-7 HM5117805LTS-5 HM5117805LTS-6 HM5117805LTT-7 HM5117805LTT-6
OCR Text ...OJ and 28-pin TSOP. * Single 5 V (10%) * Access time: 50 ns/60 ns/70 ns (max) * Power dissipation Active mode: 605 mW/550 mW/495 mW (max...cycle time RAS precharge time CAS precharge time Row address setup time Row address hold time ...
Description 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh 2M X 8 EDO DRAM, 50 ns, PDSO28

File Size 541.46K  /  32 Page

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. SDA2546-5 SDA25465 Q67100-H5096
OCR Text 5 Preliminary Data MOS IC Features q Word-organized reprogrammable nonvolatile memory q q q q q q q q in n-channel floating-gat...cycle Reprogramming by means of on-chip control (without external control) The end of the programmin...
Description Nonvolatile Memory 4-Kbit E 2 PROM with I 2 C Bus Interface
From old datasheet system
Nonvolatile Memory 4-Kbit E2PROM with I2C Bus Interface

File Size 142.17K  /  12 Page

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