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Diodes
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| Part No. |
ZXMS6001N3Q
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| OCR Text |
... <1000ppm antimony compounds. 4. automotive products are aec-q101 qualified and are ppap capabl e. automotive, aec-q101 and standard produ...5v v ds(sc) 36 v continuous input voltage v in -0.2 to +10 v peak input voltage v in -0.... |
| Description |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET
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| File Size |
719.01K /
10 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFBA1404 IRFBA1404P
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| OCR Text |
... 1mA 3.7 m VGS = 10V, ID = 95A 4.0 V VDS = 10V, ID = 250A --- S VDS = 25V, ID = 60A 20 VDS = 40V, VGS = 0V A 250 VDS = 32V, VGS = 0V, TJ = ...5V 5.0V BOTTOM 4.5V TOP
1000
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Curren... |
| Description |
Power MOSFET(Vdss=40V, Rds(on)=3.7mohm, Id=206A)
Power MOSFET(Vdss=40V/ Rds(on)=3.7mohm/ Id=206A)
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| File Size |
113.34K /
9 Page |
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it Online |
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International Rectifier, Corp.
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| Part No. |
IRF5803D2PBF
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| OCR Text |
4 a i d @ t a = 70c continuous drain current, v gs @ -10v -2.7 i dm pulsed drain current -27 p d @t a = 25c power dissipation 2.0 w...5v, i d = -2.7a v gs(th) gate threshold voltage -1.0 ??? -3.0 v v ds = v gs , i d = -250a g fs... |
| Description |
FETKY ㈢MOSFET & Schottky Diode FETKY㈢MOSFET
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| File Size |
143.87K /
11 Page |
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it Online |
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Advanced Power Electronics
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| Part No. |
AP9561AGI-HF
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| OCR Text |
...hermal resistance junction-case 4.2 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data and specifications subject to change...5v, i d =-15a - - 26 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forw... |
| Description |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
114.77K /
4 Page |
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it Online |
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Price and Availability
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