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30v 80a Datasheet PDF File

For 30v 80a Found Datasheets File :: 652 Search Time::2.891ms
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				Fairchild Semiconductor
Part No.	FDP5800
OCR Text	...= 0V to 5V VGS = 0V to 1V VDS = 30v ID = 80a Ig = 1mA ----------6890 750 295 1.2 112 58 7.0 23 13 18 9160 1000 445 -145 -----pF pF pF nC nC nC nC nC nC Switching Characteristics (VGS = 10V) tON td(on) tr td(off) tf tOFF Turn-On Time Tu...
Description	N-Channel Logic Level PowerTrench MOSFET
File Size	553.66K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDB8832
OCR Text	... Level PowerTrench(R) MOSFET 30v, 80a, 2.1m Features Typ rDS(on) = 1.5m at VGS = 5V, ID = 80a Typ Qg(5) = 100nC at VGS = 5V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 R...
Description	N-Channel Logic Level PowerTrench MOSFET 30v, 80a, 2.1mOHM
File Size	286.31K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG7PH46UDPBF IRG7PH46UD-EP
OCR Text	...= 40A IF = 40A, TJ = 150C VGE = 30v gfe ICES VFM IGES Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg...80a 6 4 2 0 ICE = 20A ICE = 40A ICE = 80a 12 VGE (V) 16 20 4 8 12 VGE (V) ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	438.26K / 11 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPP80N06S2L-11 SPB80N06S2L-11
OCR Text	... 620 200 13 29 68 27 ns VDD =30v, VGS =10V, ID =80a, RG =3 - 7 20 60 3.6 9 30 80 - nC V(plateau) VDD =44V, ID =80a V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse di...
Description	Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 11 mOhm OptiMOS Power-Transistor
File Size	310.85K / 8 Page	View it Online	Download Datasheet

				Infineon
Part No.	SPB80N06S2-09
OCR Text	...urn-on delay time t d(on) v dd =30v, v gs =10v, i d =80a, r g =4.7 - 14 21 ns rise time t r - 29 44 turn-off delay time t d(off) - 39 58 fall time t f - 28 42 gate charge characteristics gate to source charge q gs v dd =44v, i d =80a...
Description	N-Channel OptiMOS Power Transistor
File Size	517.37K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPP80N06S2L-H5 SPB80N06S2L-H5
OCR Text	...410 410 28 35 110 33 ns VDD =30v, VGS =10V, ID =80a, RG =1.2 - 14 53 145 3 18 80 190 - nC V(plateau) VDD =44V, ID =80a V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Invers...
Description	Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 5 mOhm OptiMOS Power-Transistor
File Size	310.70K / 8 Page	View it Online	Download Datasheet

				Infineon
Part No.	SPB80N06S2-05
OCR Text	...-on delay time t d ( on ) v dd =30v, v gs =10v, i d =80a, r g =2.2 ? - 18 27 ns rise time t r - 126 190 turn-off delay time t d ( off ) - 54 80 fall time t f - 20 30 gate charge characteristics gate to source charge q g s v dd =44v, i ...
Description	N-Channel OptiMOS Power Transistor
File Size	91.84K / 8 Page	View it Online	Download Datasheet

				Infineon
Part No.	SPI100N03S2-03
OCR Text	...ate voltage drain current v ds =30v, v gs =0v, t j =25c v ds =30v, v gs =0v, t j =125c i dss - - 0.01 1 1 100 a gate-source leaka...80a v gs =10v, i d =80a, smd version r ds(on) - - 2.5 2.2 3.3 3 m w 1 current limited by bo...
Description	Low Voltage MOSFETs - OptiMOS Power MOSFET, 30v, D2PAK, RDSon = 3.3mOhm, 100A, NL
File Size	526.80K / 8 Page	View it Online	Download Datasheet

For 30v 80a Found Datasheets File :: 652 Search Time::2.891ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |