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TT electronics Semelab Limited
SEME-LAB[Seme LAB]
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| Part No. |
D1008UK
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| OCR Text |
...RPOSE SILICON DMOS RF FET 80W - 28v - 500MHz PUSH-PULL
FEATURES
* SIMPLIFIED AMPLIFIER DESIGN
G (4 pls)
F
H
J
I
M
N
...4a ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 2A 1 1.6 13 50 20:1 VGS = -5V f = 1MHz VGS = 0 VGS = 0 ... |
| Description |
METAL GATE RF SILICON FET
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| File Size |
43.01K /
4 Page |
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Download Datasheet
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POWER-ONE INC
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| Part No. |
MAP110-1024C MAP110-4015P
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| OCR Text |
...1.97v to 12.02v map110-1024 24v/28v 22.8v to 29.2v 3.8/3.2a (note 2) 5.0/4.3a (note 2) 0.1% 0.5% 1% 23.95v to 24.05v notes: 1) maximum peak-...4a pk 3a/4a pk 0.3% 8% 1% -11.5v to -12.5v +5v 4.75v to 5.25v 12a/20a pk 12a/20a pk 0.2% 0.5% 1% 5.0... |
| Description |
1-OUTPUT 110 W AC-DC REG PWR SUPPLY MODULE
4-OUTPUT 110 W AC-DC REG PWR SUPPLY MODULE
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| File Size |
201.75K /
5 Page |
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it Online |
Download Datasheet |
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TY Semicondutor
TY Semiconductor Co., Ltd
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| Part No. |
KRF7343
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| OCR Text |
...13 n-channel n-ch 8.3 12 v dd = 28v,i d =1.0a,r g =6.0 p-ch 14 22 r d =16 n-ch 3.2 4.8 p-channel p-ch 10 15 v dd = -28v,i d = -1.0a,r g =6.0 n-ch 32 48 r d =16 p-ch 43 64 n-ch 13 20 p-ch 22 32 n-channel n-ch 740 v gs =0v,v ds = 25v,f = 1.0m... |
| Description |
HEXFET Power MOSFET
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET
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| File Size |
998.08K /
3 Page |
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it Online |
Download Datasheet |
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POWER-ONE INC
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| Part No. |
MAP140-1048
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| OCR Text |
...1.97v to 12.03v map140-1024 24v/28v 22.8v to 29.2v 4.6/4a (note 2) 6.3a/5.4a (note 2) 0.1% 0.5% 1% 23.95v to 24.05v map140-1048 48v 45.6v to 54.0v 2.3a 3.1a 0.1% 0.5% 1% 47.9v to 48.1v notes: 1) maximum peak to peak noise expressed as a pe... |
| Description |
1-OUTPUT 167.4 W AC-DC REG PWR SUPPLY MODULE
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| File Size |
114.06K /
4 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRF7343
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| OCR Text |
...44V, VGS = -10V N-Channel VDD = 28v, ID = 1.0A, RG = 6.0, RD = 16 ns P-Channel VDD = -28v, ID = -1.0A, RG = 6.0, RD = 16 N-Channel VGS = 0V,...4a, di/dt -150A/s, VDD V(BR)DSS, TJ 150C N-Channel Starting TJ = 25C, L = 6.5mH RG = 25, IAS = 4... |
| Description |
HEXFET Power MOSFET
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| File Size |
139.92K /
10 Page |
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it Online |
Download Datasheet |
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International Rectifier
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| Part No. |
IRF7343PBF IRF7343TRPBF
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| OCR Text |
...44V, VGS = -10V N-Channel VDD = 28v, ID = 1.0A, RG = 6.0, RD = 16 P-Channel VDD = -28v, ID = -1.0A, RG = 6.0, RD = 16 N-Channel V GS = 0V, V...4a, di/dt -150A/s, VDD V(BR)DSS, TJ 150C N-Channel Starting TJ = 25C, L = 6.5mH RG = 25, IAS = 4... |
| Description |
generation v technology
HEXFET Power MOSFET
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| File Size |
217.05K /
10 Page |
View
it Online |
Download Datasheet |
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