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DYNEX[Dynex Semiconductor]
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| Part No. |
DGT409BCA6565 DGT409BCA
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| OCR Text |
...= 4A d.c. tw1(min) = 20s IGQM = 270a typical diGQ/dt = 30A/s QGQ = 2200C VRG(min) = 2V VRG(max) = 15V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications.
Fig... |
| Description |
Reverse Blocking Gate Turn-off Thyristor
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| File Size |
60.78K /
11 Page |
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IRF[International Rectifier]
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| Part No. |
HFA120FA60
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| OCR Text |
....) = 65ns di(rec)M/dt (typ.)* = 270a/s
K1
A1
HFA120FA60
Features
Fast Recovery time characteristic Eletrically isolated base plate Large creepage distance between terminal Simplified mechanical designs, rapid assembly
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| Description |
HEXFRED ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
848.65K /
6 Page |
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IRF[International Rectifier]
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| Part No. |
IRLL024N IRLL024NPBF IRLL024NTR
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| OCR Text |
...fig. 11 )
ISD 1.9A, di/dt 270a/s, VDD V(BR)DSS,
TJ 150C
Starting TJ = 25C, L = 25 mH
RG = 25, IAS = 3.1A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
2
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IRLL024N
100
VGS 15V 10V 7.0V 5.5V 4.5V ... |
| Description |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
HEXFET Power MOSFET(HEXFET 功率MOS场效应管)
HEXFET Power MOSFET(HEXFET ???MOS?烘?搴??)
4.4 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
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| File Size |
113.26K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
HFA200MD40D
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| OCR Text |
...p.) = 45ns di(rec)M/dt (typ.) = 270a/s
Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters
Anode 1
AC
Cathode 2
Isolated Base
Description
HEXFRED diodes are optimized to reduce losses... |
| Description |
Ultrafast, Soft Recovery Diode
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| File Size |
226.02K /
5 Page |
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IRF[International Rectifier]
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| Part No. |
IRHE57133SE JANSR2N7500U5 IRHE57133SE-15
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| OCR Text |
..., VGS = 12V A ISD 9.0A, di/dt 270a/s, VDD 130V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A ... |
| Description |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)
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| File Size |
173.19K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRLIZ34NPBF
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| OCR Text |
...ee Figure 12) ISD 16A, di/dt 270a/s, VDD V(BR)DSS, TJ 175C
IRLIZ34NPbF
10000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.0V TOP
10000
I D , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
1000
1000
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| Description |
HEXFET Power MOSFET
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| File Size |
252.63K /
8 Page |
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linear
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| Part No. |
LTC1772B
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| OCR Text |
...tage accuracy and consumes only 270a of quiescent current. In shutdown, the device draws a mere 8A. To further maximize the life of a battery source, the external P-channel MOSFET is turned on continuously in dropout (100% duty cycle). High... |
| Description |
Constant Frequency Current Mode Step-Down DC/DC Controller in SOT-23
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| File Size |
168.45K /
12 Page |
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IRF[International Rectifier]
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| Part No. |
IRLIZ44NPBF
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| OCR Text |
...ee Figure 12) ISD 25A, di/dt 270a/s, VDD V(BR)DSS, T J 175C
Pulse width 300s; duty cycle 2%. t=60s, =60Hz
Uses IRLZ44N data and test conditions
IRLIZ44NPbF
1000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
1000
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| Description |
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
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| File Size |
250.53K /
8 Page |
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