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  200a 1200 Datasheet PDF File

For 200a 1200 Found Datasheets File :: 2474    Search Time::0.953ms    
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    QM300DY-2H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM300DY-2H
OCR Text ... 7 10 3 IC=400A 3 2 IC=200a 1 Tj=25C Tj=125C 0 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 IC=300A BASE CURRENT IB (A) SWI...1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 trr 10 1 10 0 7 5 3 2 10 -1 10 0 10 0 2 3 4 5 7...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 80.90K  /  5 Page

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    QM300HA-24B

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM300HA-24B
OCR Text ... 4 ton, ts, tf (s) IC=300A IC=200a IC=100A 10 2 7 VCC=600V 5 IB1=0.6A 3 -IB2=6.0A 2 10 1 7 5 3 2 3 2 SWITCHING TIME ts 1...1200 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE O...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 72.24K  /  5 Page

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    QM300HA-24

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. QM300HA-24
OCR Text ... 3 2 SWITCHING TIME IC=200a ton, ts, tf (s) IC=100A tf 1 Tj=25C Tj=125C 0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 ...1200 1600 VCE (V) BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE FORWARD BIAS S...
Description 300 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 76.58K  /  5 Page

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    QM300HA-2HB

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM300HA-2HB
OCR Text ... 4 ton, ts, tf (s) IC=300A IC=200a 10 2 7 VCC=600V 5 IB1=0.6A 3 -IB2=6.0A 2 10 1 7 5 3 2 3 2 IC=100A SWITCHING TIME ts ...1200 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE O...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 72.15K  /  5 Page

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    QM300HA-2 QM300HA-2H

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM300HA-2 QM300HA-2H
OCR Text ...IME ton, ts, tf (s) 2 IC=200a IC=300A tf 1 0 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 ...1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 trr 10 1 10 0 7 5 3 2 10 0 10 -1 10 0 2 3 4 5 7...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 71.33K  /  5 Page

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    QM300HC-M

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM300HC-M
OCR Text ... 10 1 2 3 4 5 7 10 2 IC=300A IC=200a SWITCHING TIME VCC=200V IB1=-IB2=6.0A 2 3 4 5 7 10 2 Tj=25C Tj=125C 2 3 4 5 7 10 3 10 1 ...1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 1 10 0 7 5 trr 3 2 10 -1 10 0 10 0 2 3 4 5 7...
Description HIGH POWER SWITCHING USE NON-INSULATED TYPE

File Size 63.55K  /  5 Page

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    FA57SA50LC

IRF[International Rectifier]
Part No. FA57SA50LC
OCR Text ... fig. 11 ) ISD 57A, di/dt 200a/s, VDD V(BR)DSS, TJ 150C Starting TJ = 25C, L = 446H RG = 25, IAS = 57A. (See Figure 12) Pu...1200 ID 25A 35A 57A VDS L D R IV E R 900 RG 20V tp D .U .T IA S + V - DD ...
Description HEXFET Power MOSFET

File Size 127.88K  /  8 Page

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    FQA10N80

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FQA10N80
OCR Text ...g TJ = 25C 3. ISD 9.8A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially indep...1200 800 400 0 -1 10 8 VDS = 640V Coss Notes : 1. VGS = 0 V 2. f = 1 MHz 6 4 Crs...
Description CAPACITOR KIT, AUTOMOTIVE, AECQ 200; Kit contents:24 Values RoHS Compliant: Yes
800V N-Channel MOSFET

File Size 674.28K  /  8 Page

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    FQAF10N80

Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FQAF10N80
OCR Text ...g TJ = 25C 3. ISD 9.8A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially indep...1200 800 400 0 -1 10 8 VDS = 640V Coss Notes : 1. VGS = 0 V 2. f = 1 MHz 6 4 Crs...
Description CAPACITOR KIT, FLEXITERM MLCCCAPACITOR KIT, FLEXITERM MLCC; Kit contents:30 Values 6.7 A, 800 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET
800V N-Channel MOSFET

File Size 697.39K  /  8 Page

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    HFA25PB60

International Rectifier
Part No. HFA25PB60
OCR Text ...Conditions IF = 1.0A, dif/dt = 200a/s, VR = 30V TJ = 25C TJ = 125C IF = 25A TJ = 25C TJ = 125C VR = 200V TJ = 25C TJ = 125C dif/dt = 200a/s...1200 I F = 50A 1000 di (rec) M/dt- (A /s) I F = 25A I F = 50A I F = 25A 1000 Qrr- (...
Description Ultrafast/ Soft Recovery Diode
Ultrafast, Soft Recovery Diode

File Size 210.27K  /  6 Page

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For 200a 1200 Found Datasheets File :: 2474    Search Time::0.953ms    
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