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http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
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| Part No. |
BUZ101SL-4
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| OCR Text |
...= 9.8
Fall time
tf
27 1.4 15 24 2.98 40 nC 2.1 22 36 V 3 02/Oct/1997
VDD = 30 V, VGS = 5 V, ID = 4.1 A RG = 9.8
Gate charge at th...16.4 V 1.6 ns 75 nC 120 Values typ. max. Unit
ISM VSD trr Qrr
TA = 25 C
Inverse diode forward... |
| Description |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
89.10K /
8 Page |
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Motorola
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| Part No. |
MHW1346
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| OCR Text |
...1 BSC 2.540 BSC 3.759 4.267 --- 15.24 38.100 BSC 5.080 BSC --- 6.350 11.049 --- 10.160 BSC 3.861 4.140 0.229 0.279
F
R
F
L
2X
2X 6-32UNC-2B
U
0.010 E
M
ZTA
M
12
3
5
789
N
C E K Z W
DIM A B... |
| Description |
5–200 MHz, 35.0 dB 26–Channel CATV High-split Reverse Amplifier Module
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| File Size |
71.46K /
4 Page |
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it Online |
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Motorola
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| Part No. |
MHVIC915R2
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| OCR Text |
...0 MHz, 26 Volts Output Power -- 15 W P1dB Power Gain -- 30 dB @ P1dB Drain Efficiency = 56% @ P1dB * On-Chip Matching (50 Ohm Input, >9 Ohm ...16 mm, 13 inch Reel.
MHVIC915R2
CDMA, GSM/GSM EDGE 746-960 MHz, 15 W, 27 V RF LDMOS WIDEBAND I... |
| Description |
CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
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| File Size |
463.26K /
12 Page |
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Atmel Corp.
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| Part No. |
T2901
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| OCR Text |
... 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 DEMOD_TANK2 DEMOD_OUT CP VS_VCO VREG_VCO BG_BLOCK BB_CF GND_VCO VTUNE GND1 DEMOD_TANK1 BB_OUT RAMP OUT IF_IN2 IF_IN1 VS_IF TX_OUT GND3 RF_IN2 RF_IN1 GND2 IF_TANK2 IF_TANK1 RSSI
... |
| Description |
Bluetooth Single-Chip Transceiver IC(用于2.45 GHz ISM带宽蓝牙技术收发器芯片)
From old datasheet system
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| File Size |
554.02K /
17 Page |
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it Online |
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Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
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| Part No. |
SI4511DY-T SI4511DY-T1-E3 SI4511DY SI4511DY-E3 SI4511DY-T1
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| OCR Text |
...ansconductanceb gf fs VSD VDS = 15 V, ID = 9.6 A VDS = -15 V, ID = -6.2 A IS = 1.7 A, VGS = 0 V IS = -1.7 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N...16
16 TC = 125_C 8 25_C -55_C
8 2V 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75
0 0.0
0.5
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| Description |
P-Channel 20-V (D-S) MOSFET,Low-Threshold P通道20V（D-S）MOSFET 低阈
N- and P-Channel 20-V (D-S) MOSFET
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| File Size |
74.36K /
8 Page |
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it Online |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGA2803-SM
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| OCR Text |
...e (Heat Slug)
Min
0
Max
15 500 77 300
Units
V mA dBmV C C C
Notes
1/ 2/ 3/
-65 -40
150 110
These values reflect max...16 20 350 27
Max
870
Units
MHz dB dB dB pA/rtHz dBm dB dB mA dBm
Note
2/ 2/ 2/
3/
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| Description |
CATV TIA/Gain Block
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| File Size |
208.61K /
11 Page |
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Mitsubishi
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| Part No. |
MGFS45V2527 S452527
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| OCR Text |
....9450.012)
(0.0240.006) 0.60.15
FEATURES
Class A operation Internally matched to 50 () system High output power P1dB=30W (TYP.) @f=2....16.7 (0.658)
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=6.5A RG=25
GF-38
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| Description |
2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
From old datasheet system
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| File Size |
27.03K /
2 Page |
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it Online |
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Price and Availability
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