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Infineon
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Part No. |
SIDC10D120H6
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OCR Text |
...t=600a/ m s v r = 600v t j =125 c 3.4 c di rr1 /dt t j = 25 c tbd peak rate of fall of reverse recovery current di rr2 /dt i f =15a di/dt=600a/ m s v r = 600v t j =125 c a/ m s s1 t j =25 ... |
Description |
Diodes - HV Chips - SIDC10D120H6, 1200V, 15A
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File Size |
81.46K /
4 Page |
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it Online |
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Infineon
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Part No. |
SIDC03D120H6
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OCR Text |
...t=600a/ m s v r = 600v t j =125 c 1.3 c di rr1 /dt t j = 25 c tbd peak rate of fall of reverse re covery current di rr2 /dt i f =3a di/dt=600a/ m s v r = 600v t j =125 c a/ m s s1 t j =25 c... |
Description |
Diodes - HV Chips - SIDC03D120H6, 1200V, 3A
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File Size |
67.76K /
4 Page |
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it Online |
Download Datasheet
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TOSHIBA
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Part No. |
MG600Q2YS60A
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OCR Text |
...temperature range t stg 40~125 c isolation voltage v isol 2500 (ac 1 min) v terminal: m8 D 10 n ? m screw torque mounting: m5...600a v ge = 15v t j = 125c D 3.2 3.5 v input capacitance c ies v ce = 10v, v ge = 0v, f... |
Description |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
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File Size |
220.55K /
9 Page |
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it Online |
Download Datasheet
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Price and Availability
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