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10050 CX100 08010100 CX100 160CA LBRD2 B2055 M2015EA1
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  12-ch Datasheet PDF File

For 12-ch Found Datasheets File :: 30957    Search Time::3.14ms    
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    2SJ504

HITACHI[Hitachi Semiconductor]
Part No. 2SJ504
OCR Text ...ine TO-220FM D G S 12 1. Gate 2. Drain 3. Source 3 2SJ504 Absolute Maximum Ratings (Ta = 25C) Item Drain to source vol...ch - c(t) = s (t) * ch - c ch - c = 4.17C/W, Tc = 25C PDM PW T D= 0.03 PW T 0.01 10 ...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 50.21K  /  10 Page

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    2SJ505 2SJ505L 2SJ505S

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ505 2SJ505L 2SJ505S
OCR Text ... -3 V -20 VGS = -2.5 V 0 -4 -8 -12 Drain to Source Voltage -16 -20 V DS (V) Typical Transfer Characteristics -100 V DS = -10 V Pulse Test...ch - c(t) = s (t) * ch - c ch - c = 1.67 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu ...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 53.43K  /  10 Page

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    2SJ506 2SJ506L 2SJ506S

Renesas Electronics, Corp.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ506 2SJ506L 2SJ506S
OCR Text ... Outline DPAK-2 4 D 4 12 G 3 12 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute Maximum Rati...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho ...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 49.71K  /  10 Page

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    2SJ526

HITACHI[Hitachi Semiconductor]
Part No. 2SJ526
OCR Text ... Outline TO-220FM D G 12 S 1. Gate 2. Drain 3. Source 3 2SJ526 Absolute Maximum Ratings (Ta = 25C) Item Drain to source v...ch - c(t) = s (t) * ch - c ch - c = 5.0C/W, Tc = 25C PDM PW T D= 0.03 PW T 0.01 10 ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.48K  /  9 Page

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    2SJ527 2SJ527L 2SJ527S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ527 2SJ527L 2SJ527S
OCR Text ... Outline DPAK-1 4 4 D 12 G 3 S 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ527(L),2SJ527(S) Absolute Maximum Ratin...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho ...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 53.03K  /  9 Page

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    2SJ528 2SJ528L 2SJ528S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ528 2SJ528L 2SJ528S
OCR Text ... Outline DPAK-2 4 D 4 12 G 3 12 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ528(L),2SJ528(S) Absolute Maximum Ratin...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho ...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.33K  /  9 Page

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    2SJ529 2SJ529L 2SJ529S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ529 2SJ529L 2SJ529S
OCR Text ... Low on-resistance R DS(on) = 0.12 typ. * 4 V gete drive devices * High speed switching Outline DPAK-2 4 D 4 12 G 3 12 S...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho ...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 51.89K  /  9 Page

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    2SJ530 2SJ530L 2SJ530S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ530 2SJ530L 2SJ530S
OCR Text ... Outline DPAK-2 4 D 4 12 G 3 12 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ530(L),2SJ530(S) Absolute Maximum Ratin...ch - c(t) = s (t) * ch - c ch - c = 4.17 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1 ot sh ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 56.07K  /  9 Page

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    2SJ531

HITACHI[Hitachi Semiconductor]
Part No. 2SJ531
OCR Text ... Outline TO-220CFM D G 12 3 S 1. Gate 2. Drain 3. Source 2SJ531 Absolute Maximum Ratings (Ta = 25C) Item Drain to sou...ch - c(t) = s (t) * ch - c ch - c = 4.17C/W, Tc = 25C PDM D= PW T 0.03 PW T 0.01 10...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 49.99K  /  9 Page

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    2SJ532

HITACHI[Hitachi Semiconductor]
Part No. 2SJ532
OCR Text ...tline TO-220CFM D G 12 S 3 1. Gate 2. Drain 3. Source 2SJ532 Absolute Maximum Ratings (Ta = 25C) Item Drain to source...ch - c(t) = s (t) * ch - c ch - c = 4.17C/W, Tc = 25C PDM D= PW T 0.03 PW T 0.01 10...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.69K  /  9 Page

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For 12-ch Found Datasheets File :: 30957    Search Time::3.14ms    
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