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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FPDB50PH60
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| OCR Text |
...0 0 20 30 40 50 60 70 80 90 100 110 120 130 Temperature [C]
Fig. 9. R-T Curve of the Built-in Thermistor
(c)2005 Fairchild Semiconductor Corporation
December, 2005
FPDB50PH60
Detailed Package Outline Drawings
(c)2005 Fairchi... |
| Description |
Smart Power Module for Front-End Rectifier
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| File Size |
219.97K /
12 Page |
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Supertex Inc
SUTEX[Supertex, Inc]
Supertex Inc
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| Part No. |
HV450WG HV450
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| OCR Text |
...10 - 220 4.5
Typ
Max -18 -110 VNN1 + 10.0 5.5
Unit V V V V A A mA
Conditions
High voltage negative supply Logic supply voltage VNN1 quiescent current VDD1 quiescent current VNN1 operating current VDD operating current Mode lo... |
| Description |
High-Voltage Ring Generator
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| File Size |
78.87K /
4 Page |
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SUTEX[Supertex, Inc]
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| Part No. |
HV732
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| OCR Text |
....0 Typ 28 Max 7.0 50 25 0.8 2.0 110 60 Units A K V V V pF pF Conditions VGS = -10V, VDS = -25V VGS = -10V, IDS = -1.0A IGS = -100A IGS = -2.0A --IDS = -1.0mA VGS = 0V, VDS = -25V, f = 1Mhz
Output P-Channel Damp MOSFET, OUTP
Symbol IOUT... |
| Description |
High Speed 【100V 2A Integrated Ultrasound Pulser
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| File Size |
249.65K /
10 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE2312
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| OCR Text |
...tp = 25s, Duty Cycle 1% 4 - - 110 - - MHz pF s s s s s s 8 5 - - - - - - - - - - - - - - - - 60 30 1 2 3 3 1.2 1.6 1.5 V V V V V V V IEBO VEB = 9V, Ic = 0 400 - - - - - - - - 1 5 1 V mA mA mA Symbol Test Conditions Min Typ Max Unit
Swi... |
| Description |
Silicon NPN Transistor High Voltage, High Speed Switch
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| File Size |
22.95K /
3 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE2333
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| OCR Text |
... l = 200H)
.420 (10.67) Max .110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54)
Emitter Collector/Tab
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| Description |
Silicon NPN Power Transistor for Switching Power Applications
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| File Size |
28.70K /
3 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE379
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| OCR Text |
...e = 2%.
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Base .100 (2.54)
Emitter Collector/Tab
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| Description |
Silicon NPN Transistor Power Amp, High Voltage, Switch
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| File Size |
21.64K /
3 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE51
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| OCR Text |
... Cycle = 2%.
.420 (10.67) Max .110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Base .100 (2.54)
Emitter Collector/Tab
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| Description |
Silicon NPN Transistor High Voltage / High Speed Switch
Silicon NPN Transistor High Voltage, High Speed Switch
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| File Size |
23.94K /
2 Page |
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it Online |
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RECOM Electronic GmbH
RECOM[Recom International Power]
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| Part No. |
R12TR244872 R05TR244872
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| OCR Text |
...5% min. 50kHz min. VIN = 90% to 110% of nominal 1 litre static air chamber TA = -40C to TA = +85C TA = -40C to TA = +85C 20% 3.85 g 27C typ 15mV/C typ. 300Hz/C typ. -40C min. / +85C max. -50C to +125C max.
Specifications (measured at TA=... |
| Description |
INNOLINE DC/DC-Converter INNOLINE直流/直流转换
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| File Size |
93.39K /
3 Page |
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SUTEX[Supertex, Inc]
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| Part No. |
TP5322N8-G TP5322 TP5322K1 TP5322K1-G TP5322N8
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| OCR Text |
... -100 -10 -1.0 -0.95 10 8.0 250 110 45 20 10 15 20 15 -1.8 300 15 12 1.7 Units V V mV/C nA A mA A %/C mmho pF ns Conditions VGS = 0V, ID = -2mA VGS = VDS, ID = -1mA VGS = VDS, ID = -1mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = ... |
| Description |
P-Channel Enhancement-Mode Vertical DMOS FET
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| File Size |
269.96K /
2 Page |
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it Online |
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Price and Availability
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