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MMBZ5249 P82C433 1010820 V1N4582T 02M10 4ALVCH1 TDA20 MAX1852
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  10-400a Datasheet PDF File

For 10-400a Found Datasheets File :: 3420    Search Time::1.171ms    
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    CM200DY-28H

Powerex Power Semiconductors
Part No. CM200DY-28H
OCR Text ...240 11 240 3 160 10 160 2 80 7 9 8 80 1 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 ...400A IC = 200A 8 101 Coes 6 102 4 100 Cres VGE = 0V f = 1MHz 2 IC = 80A ...
Description Dual IGBTMOD 200 Amperes/1400 Volts
Dual IGBTMOD 200 Amperes/1400 Volts

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    CM400DU-12F

Powerex Power Semiconductor...
Powerex Power Semiconductors
Part No. CM400DU-12F
OCR Text ... Q R S T U V Inches 0.87 0.33 0.10 0.85 0.98 0.11 M6 0.26 Dia. 0.02 0.62 Millimeters 22.0 8.5 2.5 21.5 25.0 2.8 M6 6.5 Dia. 0.5 15.85 1.1...400A, VGE = 15V, Tj = 25C IC = 400A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltag...
Description Trench Gate Design Dual IGBTMOD?/a> 400 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 400 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 400 Amperes/600 Volts

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    CM400DU-12NFH

Mitsubishi Electric Semiconductor
Part No. CM400DU-12NFH
OCR Text ...500 13 15 VGE = 20V 11 10 Tj = 25C 9.5 9 8.5 8 VGE = 15V 2.5 2 1.5 1 0.5 400 300 200 100 0 7 7.5 Tj = 25C Tj = 125C 0 100...400A IC = 160A 102 7 5 3 2 Tj = 25C 16 18 20 101 0 0.5 1 1.5 2 2.5 3 GATE-EMITTER VOLTAGE ...
Description HIGH POWER SWITCHING USE

File Size 43.48K  /  4 Page

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    CM400DU-24F

Mitsubishi Electric Semiconductor
Part No. CM400DU-24F
OCR Text ... mm 140 130 110 0.25 36 43.8 10 13.8 11.5 10 9 G2 20.4 E2 (26) (26) (26) Tc measured point 110 0.25 130 (15) C2E...400A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 600V, IC = 400A, VGE = 15V VCC = 600V, IC = 400A ...
Description HIGH POWER SWITCHING USE

File Size 71.47K  /  4 Page

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    CM400DU-24H

Powerex Power Semiconductors
Part No. CM400DU-24H
OCR Text ...ers 130.0 130.0 35.0 24.5 110.0 10.0 10.0 20.5 14.5 Dimensions K L M N P Q R S T Inches 1.65 1.42 1.72 0.54 0.45 5.51 0.26 Dia M8 M4 Millime...400A, VGE = 15V, Tj = 25C IC = 400A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltag...
Description Dual IGBTMOD U-Series Module 400 Amperes/1200 Volts
Dual IGBTMOD⑩ U-Series Module 400 Amperes/1200 Volts
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 400A I(C)

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    FUJI ELECTRIC CO LTD
Part No. 2MBI400N-060-01A
OCR Text ...-emitter voltage : vce [v] 10 8 6 4 2 0 0 5 10 15 20 ...400a, vge=15v, tj=25c dynamic input characteristics tj=25c gate resistance : ...
Description 400 A, 600 V, N-CHANNEL IGBT

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    CM400DU-24NFH

Powerex Power Semiconductors
Part No. CM400DU-24NFH
OCR Text ... 0.26 dia. 6.5 dia. u 0.4 10.0 v 0.16 4.0 w 0.87 22.2 x 0.72 18.25 y 0.36 9.25 z 0.71 18.0 aa 0.11 2.8 ab 0...400a, v ge = 15v, t j = 25c 5.0 6.5 volts i c = 400a, v ge = 15v, t j = 125c 5.0 ...
Description Dual IGBTMOD NFH-Series Module 400 Amperes/1200 Volts

File Size 226.37K  /  4 Page

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    CM400DU-24NFH

Mitsubishi Electric Semiconductor
Part No. CM400DU-24NFH
OCR Text ...0 600 500 400 300 200 100 0 0 5 10 Tj = 25C Tj = 125C 15 20 11 10 9 8 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLT...400A 4 IC = 160A 2 0 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE VGE...
Description HIGH POWER SWITCHING USE

File Size 44.07K  /  4 Page

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    DGT409BCA07

Dynex Semiconductor
Part No. DGT409BCA07
OCR Text ...v) average forward gate power - 10 w p rgm peak reverse gate power - 15 kw di gq /dt rate of rise of reverse gate current 15 60 a/ s t on(...400a, di t /dt = 150a/s i fg = 20a, rise time (t r ) < 1.5s - 7 s e off turn-off energy - 2500 mj...
Description Reverse Blocking Gate Turn-off Thyristor

File Size 139.51K  /  11 Page

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    CM400DU-34KA

Mitsubishi Electric Semiconductor
Part No. CM400DU-34KA
OCR Text ... mm 140 130 110 0.25 36 43.8 10 13.8 11.5 10 (15) 9 G2 20.4 E2 (26) (26) (26) Tc measured point 110 0.25 C2E1...400A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 1000V, IC = 400A, VGE = 15V VCC = 1000V, IC = 400...
Description HIGH POWER SWITCHING USE

File Size 73.12K  /  4 Page

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