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				Toshiba Semiconductor
Part No.	TC55VBM416AFTN55
OCR Text	1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VBM416AFTN is a 16,777,216-bit static random acce...13 OP 29 I/O1 14 UB 15 LB 31 I/O2 16 A18 32 I/O10 48 A16 30 I/O9 42 44 I/O13 I...
Description	1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
File Size	201.62K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic
Part No.	S6A0071A DS_S6A0071
OCR Text	1 Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form o...13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 118 117 116 115 114 113 112 111 110 1...
Description	32 COM / 60 SEG Driver & Controller for Dot Matrix LCD From old datasheet system Mobile DDI
File Size	162.85K / 33 Page	View it Online	Download Datasheet

				Linear Technology, Corp. LINEAR TECHNOLOGY CORP
Part No.	LTC1386C LTC1386IS LTC1386ISTRPBF LTC1386ISPBF
OCR Text	...oration. TYPICAL APPLICATIO 1 0.1F 3 4 0.1F 5 11 VCC 300k LOGIC INPUT LOGIC OUTPUT 10 12 5k LTC1386 VCC 300k Quiescent Supply Current...13 562 OUTPUT 562 INPUT 0 LOGIC OUTPUT 9 5k 8 15 562 INPUT LTC1386 * TA01 U ...
Description	3.3V Low Power EIA/TIA562 Transceiver; Package: SO; No of Pins: 16; Temperature Range: -40°C to 85°C DUAL LINE TRANSCEIVER, PDSO16
File Size	102.44K / 8 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	1517-110M
OCR Text	1517-110M 110 Watts, 40 Volts, 200s, 10% Radar 1480 to 1650 MHz GENERAL DESCRIPTION The 1517-110M is an internally matched, COMMON BASE...13 4.95 - j 3.69 5.10 - j 3.27 Zl 2.50 - j 7.67 2.40 - j 7.40 2.31 - j 7.15 2.22 - j 6.91 2.14 - j 6...
Description	110 Watts, 40 Volts, 200us, 10% Radar 1480 to 1650 MHz
File Size	109.93K / 4 Page	View it Online	Download Datasheet

				ANADIGICS, Inc
Part No.	AWT1921S11
OCR Text	...v. 4 ELECTRICAL SPECIFICATIONS (1) PARAMETER Frequency Power Output Power Added Efficiency Gain @ POUT = +35 dBm ACPR @ 0.730 MHz 1.23 MHz ...13.359 -31.442 j 4 4.800000000 GHz 6.663 16.669 j .2 0 .2 .5 11 2 5 4 -.2 ...
Description	Integrated High Power Amp 1610 MHz
File Size	322.85K / 8 Page	View it Online	Download Datasheet

				Anadigics Inc ANADIGICS[ANADIGICS, Inc]
Part No.	AWT1921 AWT1921S11
OCR Text	... PRELIMINARY DATA SHEET - Rev 1.0 PRODUCT DESCRIPTION The AWT1921 is a four stage monolithic amplifier for use in communication syst...13 16,17 18-25 N AME GND VGS1 & RFIN V DD V D2 V D1 GND V D3 VGS2 VREF V SS VGS3 VGS4 V D4 D ESC R I...
Description	The AWT 1921 is a four stage monolithic amplifier for use in communication systems that require high gain and output intercept point. Integrated High Power Amp 1610 MHz From old datasheet system
File Size	454.76K / 12 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MC10EP105FAR2 MC100EP105FAR2 MC100EP105FA MC100EP105 MC100EP1 MC10EP105FA
OCR Text	...GRAM* MCxxx EP105 AWLYYWW 32 1 = 10 or 100 = Assembly Location = Wafer Lot = Year = Work Week * * Safety Clamp on Inputs xxx A WL Y...13 12 11 10 9 Q2 Q2 2 3 4 5 6 7 8 Q3 Q3 VCC Q1 Q1 Q2 Q2 Q3...
Description	3.3V / 5VECL Quad 2-Input Differential AND/NAND 3.3V / 5VECL Quad 2-Input Differential AND/NAND
File Size	81.83K / 8 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXTP10N60PM
OCR Text	...to 175C TJ = 25C to 175C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, d...13/10 Nm/lb.in. 4 g Advantages Easy to mount Space savings High power density Symbol Test Cond...
Description	PolarHV Power MOSFET
File Size	49.26K / 2 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTF10045
OCR Text	1.60-1.65 GHz GOLDMOSTM Field Effect Transistor Description The PTF 10045 is a common source N-channel enhancement-mode lateral MOSFET int...13 12 Gain (dB) Efficiency (%) 70 60 50 40 Broadband Test Fixture Performance Gain Efficiency (%...
Description	30 Watts, 1.60.65 GHz GOLDMOS Field Effect Transistor 30 Watts 1.60-1.65 GHz GOLDMOS Field Effect Transistor 30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor
File Size	206.38K / 6 Page	View it Online	Download Datasheet

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