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For 1 212 Found Datasheets File :: 8277 Search Time::1.985ms
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				Rohm Toshiba, Corp.
Part No.	2SB1386 2SB1412 2SB1326 A5800356 2SB1436
OCR Text	1) Low VCE(sat). VCE(sat) = 0.35V (Typ.) (IC / IB = 4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 /...212 Transistors FPackaging specifications and hFE 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 hF...
Description	From old datasheet system Low Frequency Transistor(-20V/-5A) Low Frequency Transistor(-20V,-5A) 低频晶体管（- 20V的，- 5A型）
File Size	153.28K / 4 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	2SC4093 2SC4093-T1 2SC4093-T2 2SC4093R28-T1 2SC4093R27-T1 2SC4093R26-T1 2SC4093RBH-T2 2SC4093R27-T2 2SC4093RBH-T1 2SC4093R26-T2 2SC4093R28-T2 2SC4093RBF-T2 2SC4093RBG-T2 2SC4093RBF-T1 2SC4093NE85639E 2SC4093-T2-R26 2SC4093-T2-R27 2SC4093R-T1
OCR Text	...s high-isolation gain. 2.90.2 (1.8) 0.85 0.95 PACKAGE DIMENSIONS (Units: mm) 0.4 -0.05 0.4 -0.05 0.4 0.16 -0.06 +0.1 2.8 -0.3 +0.2 ...212 0.198 0.186 S22 42.5 41.2 41.0 42.5 43.2 47.8 53.0 62.2 67.4 75.5 4 2SC4093 S-PARAMET...
Description	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管\|晶体管\|叩\| 12V的五（巴西）总裁\| 100mA的一（c）\|的SOT - 143VAR Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; Number of Contacts:19; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight 微波低噪声放大器NPN硅外延晶体管4个引脚微型模 TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SOT-143VAR SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits Discrete UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR For amplify high frequency and low noise.
File Size	68.16K / 8 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010B2LC APT5010LLC
OCR Text	... TC = 25C Pulsed Drain Current 1 T-MAXTM Y MIN Lower Input Capacitance Easier To Drive Popular TMax Package D G S R A...212) 6.20 (.244) 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13...
Description	Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	117.68K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010B2LL APT5010LLL
OCR Text	... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...212) 6.20 (.244) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.5...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	55.78K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
Part No.	APT5010B2VFR
OCR Text	... TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT5010B2VFR UNIT Volts Amps 500 47 188 30 40 520...212) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) ...
Description	POWER MOS V 500V 47A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. TERM BLOCK 10MM VERT 3POS PCB 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	64.50K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technolo...
Part No.	APT5010B2VR APT5010B2VRG
OCR Text	... TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT5010B2VR UNIT Volts Amps 500 47 188 30 40 520 ...212) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) ...
Description	POWER MOS V 500V 47A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. New T-MAX?Package (Clip-mounted TO-247 Package)
File Size	61.66K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010B2 APT5010B2FLL APT5010LFLL
OCR Text	... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...212) 6.20 (.244) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.5...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	54.02K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology Ltd.
Part No.	APT5010LLC APT5010B2LC APT5010B2LC-06
OCR Text	... TC = 25C Pulsed Drain Current 1 B2LC T-MAXTM TO-264 LLC D G S All Ratings: TC = 25C unless otherwise specified. APT5010...212) 6.20 (.244) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.5...
Description	47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI 500V 47A 0.100 Ohm
File Size	64.96K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
Part No.	APT5014B2LC APT5014LLC APT5014
OCR Text	... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...212) 6.20 (.244) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 1...
Description	POWER MOS VI 500V 37A 0.140 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
File Size	34.16K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5014B2VR
OCR Text	... TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT5014B2VR UNIT Volts Amps 500 37 148 30 40 450 ...212) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 37A 0.140 Ohm
File Size	61.78K / 4 Page	View it Online	Download Datasheet

For 1 212 Found Datasheets File :: 8277 Search Time::1.985ms
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