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electronic sensor
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| Part No. |
CS005L
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| OCR Text |
... sales@esr.info tel. +49 (0) 89 611 808-0 fax +49 (0) 89 611 808-11 (100402) ? resistance ranges, to...82m 2% 820m 10% 10g 10%
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| Description |
Thickfilm Resistor
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| File Size |
122.87K /
3 Page |
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Guangdong Kexin Industrial ...
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| Part No. |
SI2319DS-HF
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| OCR Text |
...n ) 130m ( v g s = - 4.5v ) 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.gate 2.source 3.drain 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 g s d 2 3 1 a ... |
| Description |
P-Channel MOSFET
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| File Size |
1,656.59K /
5 Page |
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it Online |
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Wuxi NCE Power Semiconducto...
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| Part No. |
NCE55P04S
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| OCR Text |
... v1.0 1 nce p-channel enhancement mode power mosfet description the nce55p04s uses advanced trench technolo...82m ? @ v gs =-10v high density cell design for ultra low rdson fully characterized ava... |
| Description |
NCE P-Channel Enhancement Mode Power MOSFET
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| File Size |
359.39K /
7 Page |
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it Online |
Download Datasheet |
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Pan Jit International I...
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| Part No. |
PJA3401
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| OCR Text |
...ethod 2026 ? approx. weight: 0.0003 ounces, 0.0084 grams ? marking: a01 parameter symbol limit units drain-source voltage v ds -30 v gate-source voltage v gs + 12 v continuous drain current i d -3.6 a pulsed drain current... |
| Description |
30V P-Channel Enhancement Mode MOSFET
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| File Size |
198.38K /
6 Page |
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it Online |
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Pan Jit International I...
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| Part No. |
PJA3413
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| OCR Text |
...ethod 2026 ? approx. weight: 0.0003 ounces, 0.0084 grams ? marking: a13 parameter symbol limit units drain-source voltage v ds -20 v gate-source voltage v gs + 12 v continuous drain current i d -3.4 a pulsed drain current... |
| Description |
20V P-Channel Enhancement Mode MOSFET
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| File Size |
210.29K /
6 Page |
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it Online |
Download Datasheet |
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Cystech Electonics Corp...
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| Part No. |
MTC3586BDFA6
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| OCR Text |
...package shipping mtc3586bdfa6-0-t1-g dfn2 2-6l (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel mtc3586bdfa6 dfn2 2-6l g gate s source d drain environment friendly grade : s for rohs compl... |
| Description |
N- AND P-Channel Enhancement Mode MOSFET
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| File Size |
427.15K /
13 Page |
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it Online |
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