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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDD3672 FDD3672NL
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| OCR Text |
...ture 44 31 6.5 Figure 4 120 135 0.9 -55 to 175 A A A A mJ W W/oC
o
Ratings 100 20
Units V V
C
Thermal Characteristics
RJC RJA RJA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal... |
| Description |
N-Channel UltraFET Trench MOSFET 100V/ 44A/ 28m
N-Channel UltraFET Trench MOSFET 100V, 44A, 28mз
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 44A, 0.028 Ohms @ VGS = 10V, TO-252/DPAK Package
N-Channel UltraFET Trench MOSFET 100V, 44A, 28mOhm
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| File Size |
171.11K /
11 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDM3300NZ_07 FDM3300NZ
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| OCR Text |
...Note 1a) Rating 20 12 10 40 2.1 0.9 -55 to +150 Units V V A W C
Thermal Characteristics
RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 60 135 C/W
Package Marking and Orderi... |
| Description |
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 10A, 23mヘ
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| File Size |
188.85K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFIZ34VPBF
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| OCR Text |
...r M3 srew
Max.
20 14 120 30 0.20 20 81 30 3.0 4.5 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Typ.
--- ---... |
| Description |
Advanced Process Technology
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| File Size |
211.15K /
8 Page |
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it Online |
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KEC[KEC(Korea Electronics)]
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| Part No. |
KMB010P30QA
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| OCR Text |
...tg RthJA* -30 25 -10 -50 -1.7 2.0 150 -55~150 62.5 /W UNIT V V A A A W
DIM A B1 B2 D G H L P T
MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05
FLP-8
KMB... |
| Description |
P-Ch Trench MOSFET
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| File Size |
460.35K /
4 Page |
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it Online |
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KEC Holdings
KEC[KEC(Korea Electronics)]
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| Part No. |
KMB6D0DN30QA
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| OCR Text |
...H L P T
MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05
MAXIMUM RATING (Ta=25
CHARACTERISTIC Drain Source Voltage Gate Source Voltage DC Drain Current Pulsed... |
| Description |
Dual N-Ch Trench MOSFET 双N沟道MOSFET通道
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| File Size |
462.34K /
5 Page |
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it Online |
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NJRC[New Japan Radio]
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| Part No. |
NJU6824
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| OCR Text |
...100m(DMY0 ~ DMY9) :43m(Min) :14.0~22.5m (Typical 18m) <tolerance : 3m > :Au
Bump Pitch Bump Height Bump Material
Alignment marks a: 30m b: 6m c: 120m d: 27m Alignment mark coordinates X=-10866m, Y= 1106m X= 10866m, Y=-1106m b c b a c ... |
| Description |
128-common x (128+2) RGB-Segment, in 4096-Color STN LCD DRIVER
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| File Size |
967.89K /
110 Page |
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it Online |
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SUMIDA[Sumida Corporation]
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| Part No. |
RCR-875D RCH8011 RCH-855 RCH-875 RCH-895
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| OCR Text |
0 o0.7
( 2.5H - 10mH )
RCH-875
o8.3MAX.
DIMENSIONS (mm)
5.0
CONSTRUCTION
7.5MAX.
5.0 o0.7
( 2.2H - 10mH )
RCH-89...28m 15.3m 26m 4.0 2.7 17.2m 4.7 2.8 16.4m 31m 3.6 2.5 19.1m 4.5 2.7 18.5m 34m 3.4 2.4 21.2m 4.2 2.6 ... |
| Description |
POWER INDUCTORS
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| File Size |
170.29K /
2 Page |
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it Online |
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SYNC-POWER[SYNC POWER Crop.]
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| Part No. |
SPN4412S8TG SPN4412 SPN4412S8RG
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| OCR Text |
...ID=6.2A IS=2.3A,VGS =0V
30 1.0 3.0 100 1 5 25 0.022 0.030 13 0.8 16 3 2.5 450 240 38 15 6 10 40 20 12 20 80 0.028 0.036 1.2 24
V nA uA A S V
VDS=15V,VGS=10V ID= 2A
nC
pF
nS
2007/ 07/ 17 Ver.2
Page 3
SPN4412
N-Ch... |
| Description |
N-Channel Enhancement Mode MOSFET N沟道增强型MOS
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| File Size |
205.52K /
8 Page |
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it Online |
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SYNC-POWER[SYNC POWER Crop.]
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| Part No. |
SPN4426S8TG SPN4426 SPN4426S8RG
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| OCR Text |
...it
V V A A A W /W
7.4 6.0 35 2.3 2.5 1.6 -55/150 -55/150 80
2006/10/30 Ver.1
Page 2
SPN4426
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted)
Parameter Static Drain-Source Brea... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
228.28K /
8 Page |
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it Online |
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Price and Availability
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