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  0.19a Datasheet PDF File

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    IRFN150SMD

SemeLAB
SEME-LAB[Seme LAB]
International Rectifier
Part No. IRFN150SMD
OCR Text 0 (0 .1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 ...19A W 0.070W 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 ....
Description N-CHANNEL POWER MOSFET

File Size 22.27K  /  2 Page

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    IRFP4232PBF

International Rectifier
Part No. IRFP4232PBF
OCR Text ...to-Case f Typ. --- Max. 0.35 Units C/W Notes through are on page 8 www.irf.com 1 04/21/05 IRFP4232PbF Electrical...19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms Id Vds Vgs L ...
Description PDP MOSFET

File Size 290.96K  /  8 Page

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    NDP508A NDP508AE

Fairchild Semiconductor
Part No. NDP508A NDP508AE
OCR Text ...res 19 and 17A, 80V. RDS(ON) = 0.08 and 0.10. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-d...19A 15 V DS = 12V 24 64 500 C oss 200 10 100 5 f = 1 MHz VGS = 0V 1 2 3 5 10...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 54.49K  /  6 Page

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    FDB6676S FDP6676S FDB6676SS62Z

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FDB6676S FDP6676S FDB6676SS62Z
OCR Text ... 6.5 m @ VGS = 10 V RDS(ON) = 8.0 m @ VGS = 4.5 V * Includes SyncFET Schottky body diode * Low gate charge (40nC typical) * High performa...19A 0.014 0.012 1.2 0.01 1 TA = 125oC 0.008 0.8 0.006 TA = 25oC 0.6 -55 -3...
Description 76 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
From old datasheet system
30V N-Channel PowerTrench SyncFET™
30V N-Channel PowerTrench SyncFET⑩
30V N-Channel PowerTrench SyncFET TM

File Size 110.15K  /  6 Page

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    RWS450A-12 RWS450A-15 RWS450A-24 RWS450A-3 RWS150A-12 RWS200A-12 RWS200A-15 RWS200A-24 RWS200A-5 RWS200A-3 RWS50A-5 RWS1

LAMBDA[DENSEI-LAMBDA]
Part No. RWS450A-12 RWS450A-15 RWS450A-24 RWS450A-3 RWS150A-12 RWS200A-12 RWS200A-15 RWS200A-24 RWS200A-5 RWS200A-3 RWS50A-5 RWS100A-12 RWS100A-15 RWS100A-24 RWS100A-48 RWS100A-5 RWS150A-15 RWS150A-24 RWS150A-48 RWS150A-5 RWS15A RWS15A-12 RWS15A-15 RWS15A-24 RWS15A-48 RWS15A-5 RWS300A-12 RWS300A-15 RWS300A-24 RWS300A-3 RWS300A-5 RWS30A-12 RWS30A-15 RWS30A-24 RWS30A-48 RWS30A-5 RWS450A-5 RWS50A-12 RWS50A-15 RWS50A-24 RWS50A-48
OCR Text ...on cooling 4. Operating ambient 0 ~ +60C RWS15A, 30A, 50A / 0 ~ +50C: 100%, +60C: 60% temperature RWS100A, 150A / 0 ~ +50C: 100%, +60C:50% (...19A 12V 228W 15A 15V 225W 9A 24V 216W 60A 3V 180W 60A 5V 300W 26A 12V 312W 21A 15V 315W 24V 13A 312W...
Description    Single output 15W ~ 450W

File Size 305.48K  /  4 Page

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    IRFP31N50L

International Rectifier, Corp.
Part No. IRFP31N50L
OCR Text ...High Speed Power Switching 500V 0.15 31A l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results in Simple Dr...19A 3.0 --- 5.0 V VDS = V GS, ID = 250A --- --- 50 A VDS = 500V, VGS = 0V --- --- 2.0 mA VDS = 400V...
Description Power MOSFET(Vdss=500V, Rds(on)typ.=0.15ohm, Id=31A) 功率MOSFET(减振钢板基本\u003d 500V及的Rdson)典\u003d 0.15ohm,身份证\u003d 31A条)
HEXFET? Power MOSFET

File Size 93.16K  /  8 Page

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    IRFU3709

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFU3709
OCR Text ... Max. 30 20 90 57 360 120 48 0.96 -55 to + 150 Units V V A W W mW/C C Thermal Resistance Parameter RJC RJA Junction-to-Case Junc...19A 30A 800 RG 20V D .U .T IA S tp 0.0 1 + - VD D A 600 Fig 12a. Unclamped In...
Description TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 90A I(D) | TO-251AA 晶体管| MOSFET的| N沟道| 30V的五(巴西)直| 90A型(丁)|51AA
HEXFET? Power MOSFET
SMPS MOSFET

File Size 86.77K  /  9 Page

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    MMBT3416LT3_D MMBT3416LT3 ON2117 MMBT3416L MMBT3416LT3-D

Motorola, Inc
ONSEMI[ON Semiconductor]
Part No. MMBT3416LT3_D MMBT3416LT3 ON2117 MMBT3416L MMBT3416LT3-D
OCR Text ... Symbol VCEO VEBO IC Value 40 4.0 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board(1) T...19A DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZJ...
Description General Purpose Amplifier NPN Silicon
Transistor SSP NPN
From old datasheet system
General Purpose Amplifier(NPN Silicon)
QENERAL PURPOSE AMPLLFLER

File Size 294.31K  /  8 Page

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    IRHN57250SE

International Rectifier, Corp.
Part No. IRHN57250SE
OCR Text ...N57250SE 100K Rads (Si) RDS(on) 0.06 ID 31A IRHN57250SE 200V, N-CHANNEL 4# TECHNOLOGY c SMD-1 International Rectifier's R5T...19A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 19A VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125C V...
Description 200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package 20000kRad高可靠性单N通道看到一贴片MOSFET的硬 1封装
RADIATION HARDENED POWER MOSFET

File Size 122.75K  /  8 Page

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    1150-1 1150-19A 4560-1 4560-12A 4575-12A 1088-1 1088-19A 1600-1 1600-19A 4115-12A 4115-1B 4575-1

GILWAY[Gilway Technical Lamp]
Part No. 1150-1 1150-19A 4560-1 4560-12A 4575-12A 1088-1 1088-19A 1600-1 1600-19A 4115-12A 4115-1B 4575-1
OCR Text ...75-12A 4115-1B 4115-12A Volts 5.0 5.0 5.0 5.0 5.0 5.0 Amps 0.060 0.060 0.075 0.075 0.115 0.115 M.S.C.P. 0.050 0.050 0.090 0.090 0.150 0.150 ...19A 1150-1 1150-19A 1088-1 1088-19A Volts 5.0 5.0 5.0 5.0 5.0 5.0 Amps 0.060 0.060 0.115 0.115 0.140...
Description T- Lens-End Lamps, T-1 Lens-End Lamps
T- Lens-End Lamps T-1 Lens-End Lamps

File Size 51.69K  /  1 Page

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