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				Alpha & Omega Semiconductors
Part No.	AOD4110
OCR Text	... Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	113.40K / 5 Page	View it Online	Download Datasheet

				Cystech Electonics Corp...
Part No.	MTE011N10RH8-0-T6-G
OCR Text	... repetitive rating, pulse width limited by junction temperature t j(max) =150 c. ratings are based on low frequency and low duty cycles to keep initial t j =25 c. 4.100% te sted by conditions of l=0.5mh, ...
Description	N-Channel Enhancement Mode Power MOSFET
File Size	575.08K / 10 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOD4128
OCR Text	... Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained usin...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	114.95K / 5 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOD4132
OCR Text	... Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained usin...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	113.13K / 5 Page	View it Online	Download Datasheet

				BCD Semiconductor Manufacturing Limited
Part No.	AP2401B31KTR-E1 AP2401 AP2401B12KTR-E1 AP2401B13KTR-E1 AP2401B14KTR-E1
OCR Text	...BCD Semiconductor Manufacturing Limited Data Sheet DUAL LDO REGULATORS Pin Configuration K Package (SOT-23-6) AP2401 CE1 VIN CE2 1 2 3 6 5 4 VOUT1 GND VOUT2 Figure 2. Pin Configuration of AP2401 (Top View) Pin Descr...
Description	DUAL LDO REGULATORS
File Size	739.72K / 22 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text	... Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25C, L = 260H RG = 25, IAS = 50A, VGS =10V (See Figure 12) ISD 50A, di/dt 230A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle ...
Description	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?
File Size	122.02K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1010E
OCR Text	... Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents operation outside rated limits. Starting TJ = 25C...
Description	Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?
File Size	143.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text	... Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 270H RG = 25, IAS = 43A, VGS=10V (See Figure 12) ISD 43A, di/dt 210A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycl...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?
File Size	144.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010N
OCR Text	... Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 43A, di/dt 210A/s, VDD V(BR)DSS, TJ 175C Starting TJ = 25C, L = 270H Pulse width 400s; duty cycle 2%. RG = 25, IAS = 43A, VGS=10V ...
Description	Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)
File Size	154.40K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010Z IRF1010ZL IRF1010ZS
OCR Text	...ain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100C Continuous Drain Current, VGS @ 10V ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM PD @TC = 25C Power Dissipation Linear Derating F...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET
File Size	298.51K / 12 Page	View it Online	Download Datasheet

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