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FR104 2272C NFSW757G B125C 837ET AD7476 MB510 TA7415P
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  -6.1a Datasheet PDF File

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    Filtran Ltd.
Filtran, Ltd.
Part No. 8628-15B 8628-15C 8628-33B 8628-33C 8628-35A 8628-12A 8628-10C 8628-12C 8628-10B 8628-12B 8628-56B 8628-82B 8628-68B 8628-XXX 8628-18B 8628-27C 8628-27B 8628-18C 8628-76A 8628-47A 8628-47C 8628-22B 8628-47B 8628-22C 8628-61A
OCR Text ...8628-24A 8628-35A 8628-47A 8628-61A 8628-76A 8628-10B 8628-12B 8628-15B 8628-18B 8628-22B 8628-27B 8628-33B Inductance (H) 1.2 2.4 3.5 4.7 6.1 7.6 10 12 15 18 22 27 33 DCR ( MAX) 7.0m 11.5m 1.35m 15.8m 17.6m 20.0m 21.6m 24.3m 27.0m 39.2m 43...
Description CHOKE Power Chokes 扼流圈功率扼流圈

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    Mitsubishi Electric Corporation
Part No. CR5AS-12 CR5AS-8
OCR Text ...MPLE IGT (25C) #2 # 1 @11A # 2 @61A 100 7 5 3 2 PG(AV) = 0.1W VGT = 0.8V IGT = 200A (Tj = 25C) IFGM = 0.3A 10-1 7 5 VGD = 0.1V 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 GATE CURRENT (mA) 101 7 5 3 VD = 6V 2 RL = 60 10...
Description Integrated Gate Bipolar Transistor (IGBT) Modules: 250V

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    H25030-3S H25030-1Q H25030-1P H25030-1PR H25030-2P H25030-2C H25060-2C H25030-2PR H25030-3P H25030-2Q H25400-1CR H25200-

Cooper Bussmann, Inc.
Part No. H25030-3S H25030-1Q H25030-1P H25030-1PR H25030-2P H25030-2C H25060-2C H25030-2PR H25030-3P H25030-2Q H25400-1CR H25200-1CR H25100-3SR H25200-3CR H25400-3CR H25100-1CR H25600-1CR H25100-3CR H25600-3CR H25030-3C H25060-3C H25100-2SR H25030-2SR H25100-1SR H25030-1CR H25030-1SR H25030-2CR H25100-2CR H25060-1C H25030-3CR H25030-3PR
OCR Text ... FIGURE 6 4.94" 1.56" 250V, 61A to 100A 2.06" 0.25" 0.62" 1.81" 0.59" 0.59" 0.62" 1.56" 0.28" DIA. x 0.5" C'BORE 7.36" 2.38" 2.125" FIGURE 7 FIGURE 8 FIGURE 9 250V, 101A to 600A B H K G F 250V, 1...
Description
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    SSD50P06-15D

SeCoS Halbleitertechnologie GmbH
Part No. SSD50P06-15D
OCR Text 61a, -60v, r ds(on) 17m p-ch enhancement mode power mosfet 20-dec-2010 rev.b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a c d n o p g e f h k j m b to-252(d-pack) rohs com...
Description P-Ch Enhancement Mode Power MOSFET

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    IPG20N04S4-09

Infineon Technologies AG
Part No. IPG20N04S4-09
OCR Text ...8 k/w the chip is able to carry 61a at 25c. t c =25 c values v gs =0 v, v ds =25 v, f =1 mhz v dd =20 v, v gs =10 v, i d =20 a, r g =11 w v dd =32 v, i d =20 a, v gs =0 to 10 v rev. 1.0 page 3 2010-10-08 ipg20n04s4-09 1 power dissipation ...
Description OptiMOS-T2 Power-Transistor

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    FDB3652 FDI3652 FDP3652

Fairchild Semiconductor
Part No. FDB3652 FDI3652 FDP3652
OCR Text ...nel powertrench ? mosfet 100v, 61a, 16m ? features ?r ds(on) = 14m ? (typ.), v gs = 10v, i d = 61a q g (tot) = 41nc (typ.), v gs = 10v  low miller charge  low qrr body diode  uis capability (single pulse and repetitive pulse)  q...
Description N-Channel PowerTrench MOSFET 100V, 61A, 16m Ohm
N-Channel PowerTrench MOSFET 100V, 61A, 16mOhm

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    IRL3102S IRL3102STRL IRL3102STRR

International Rectifier
Part No. IRL3102S IRL3102STRL IRL3102STRR
OCR Text ... 20v r ds(on) = 0.013 w i d = 61a description parameter typ. max. units r q jc junction-to-case CCC 1.4 r q ja junction-to-ambient ( pcb mounted,steady-state)** CCC 40 c/w thermal resistance 2 d pak l advanced process technology l surfac...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

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    Mitsubishi Electric Corporation
Part No. FU-48SDF-1
OCR Text ... cooler current ipe ? t=40 c-0.61a cooler voltage vpe ? t=40 c-1.22v optical fiber specification parameter limits unit type single mode --- mode field dia. 9.5 1 m cladding dia. 125 2 m jacket dia. 0.9typ. mm mitsubishi (optical dev...
Description 1.3 um DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION)

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