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				SYNC POWER Crop.
Part No.	SPC660114
OCR Text	...5 p d 1.15 w t a =70 0.75 operating junction temperature t j -55/150 storage temperature range t stg -55/150 therm...8a n-ch 0.048 0.068 ? v gs =-10v,i d =-2.8a p-ch 0.077 0.105 v gs = 4.5v,i d = 2.3a n-ch 0...
Description	N & P Pair Enhancement Mode MOSFET
File Size	288.65K / 11 Page	View it Online	Download Datasheet

				Cystech Electonics Corp.
Part No.	MTP1406L3
OCR Text	...wer dissipation (t a =25 ) pd 0.02 w/ c linear derating factor operating junction and storage temperature tj, tstg -55~+150 ...8a, v ds =-30v, v gs =-10v t d(on) - 10 - tr - 7 - t d(off) - 43 - t f - 25 -...
Description	P-Channel Enhancement Mode Power MOSFET
File Size	240.99K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	CD40147BMS FN3357 CD4014
OCR Text	... 74 85 C6 B7 VSS 8 16 VDD 15 0 14 D 13 3 12 2 11 1 10 9 9A Functional Diagram Applications * Keyboard Encoding * 10 Line to BCD En...8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 +25oC, +25oC, LIMITS TEMPERATURE +25oC +125oC -55oC +25oC +125...
Description	10 Line to 4 Line BCD Priority Encoder(10-4线十进制编码 From old datasheet system
File Size	80.17K / 8 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	2N6536
OCR Text	... 15 a i b base current 0.25 a p t total power dissipation t c =25 ?? 36 w t j junction temperature 150 ?? t stg sto...8a; i b =80ma 3.0 v v be-1 base -emitter on voltage i c =5a ; v ce =3v 2.8 v v be-2 base ...
Description	Silicon NPN Power Transistors
File Size	43.19K / 3 Page	View it Online	Download Datasheet

				Savantic, Inc.
Part No.	2N6536
OCR Text	... 15 a i b base current 0.25 a p t total power dissipation t c =25 36 w t j junction temperature 150 t stg storage t...8a; i b =80ma 3.0 v v be-1 base -emitter on voltage i c =5a ; v ce =3v 2.8 v v be-2 base ...
Description	Silicon NPN Power Transistors
File Size	108.53K / 3 Page	View it Online	Download Datasheet

				Quanzhou Jinmei Electronic Co.,Ltd.
Part No.	2N6536
OCR Text	... 15 a i b base current 0.25 a p t total power dissipation t c =25 ?? 36 w t j junction temperature 150 ?? t stg s...8a; i b =80ma 3.0 v v be-1 base -emitter on voltage i c =5a ; v ce =3v 2.8 v v be-2 base ...
Description	Silicon NPN Power Transistors
File Size	45.20K / 3 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	D44VH
OCR Text	...ge d44vh 10 i c = 25ma ;i b = 0 b 80 v v ce (sat)-1 collector-emitter saturation voltage i c = 8a ;i b = 0.4a 0.4 v v ce (sat)-2 collector-emitter saturation voltage i c = 15a ;i b = 3a;t c =100 0.8 v v be (sat) ba...
Description	isc Silicon NPN Power Transistors
File Size	83.38K / 2 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
Part No.	SSRF08N70SL SSRF08N70SL-15
OCR Text	... derate above 25c p d 0.42 w single pulse avalanche energy 1 e as 632 mj operating junction and storage temperature range...8a, v dd =140v, r g =25 , starting t j =25c 1 gate 3 source 2 drain a m j k l l...
Description	N-Ch Enhancement Mode Power MOSFET
File Size	452.56K / 5 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FMV16N50E
OCR Text	... the gate threshold volta ge (3.0 0. 5v) high avalanche durability applications switching regulators ups (uninterruptible power supply) dc-d...8a, v gs =10v - 0.33 0.38 ? forward transconductance g fs i d =8a, v ds =25v 8.5 17 - s input capaci...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	413.47K / 5 Page	View it Online	Download Datasheet

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