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Alpha & Omega Semiconductor
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| Part No. |
AOD4N60
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| OCR Text |
... capacitance dynamic parameters turn-on rise time v gs =10v, v ds =300v, i d =4a, gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =480v, i d =4a turn-on delaytime gate source charge drain-source breakdown voltag... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
340.74K /
6 Page |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF5N100
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| OCR Text |
... capacitance output capacitance turn-on delaytime turn-off delaytime v gs =10v, v ds =500v, i d =5a, r g =25 gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =800v, i d =5a dynamic parameters electrical characte... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
348.23K /
6 Page |
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it Online |
Download Datasheet |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF5B65M2
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| OCR Text |
...wheeling diode ? high efficient turn-on di/dt controllability ? low vce(sat) enables high efficiencies ? low turn-off switching loss and softness ? very good emi behavior ? high short-circuit ruggedness 650v g c c e to-220f symbol v ce v g... |
| Description |
IGBT with Anti-Parallel Diode IGBTs
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| File Size |
563.84K /
9 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF5B60D
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| OCR Text |
...us collector current a t c =25c turn off soa, v ce 600v, limited by t jmax 65 12.5 c 20 aotf5b60d maximum junction-to-ambient 10 s t c =...on) - 12 - ns t r - 15 - ns turn-on rise time turn-on delaytime t j =25c gate to collector charge ga... |
| Description |
IGBT with Anti-Parallel Diode IGBTs
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| File Size |
739.61K /
9 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AOL1404
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| OCR Text |
...ance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =10v, i d =20a gate source chargegate drain charge body...on delaytime dynamic parameters turn-on rise timeturn-off delaytime a . the value of r ja is measu... |
| Description |
Single LV MOSFETs (12V - 30V)
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| File Size |
226.74K /
6 Page |
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it Online |
Download Datasheet |
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Alpha & Omega Semiconductor
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| Part No. |
AOL1404G
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| OCR Text |
... time i f =20a, di/dt=500a/ m s turn-off delaytime turn-off fall time v gs =10v, v ds =10v, r l =0.5 w , r gen =3 w i f =20a, di/dt=500a/ m s turn-on rise time turn-on delaytime gate-body leakage current diode forward voltage dynamic parame... |
| Description |
Single LV MOSFETs (12V - 30V)
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| File Size |
336.48K /
6 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO6810
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| OCR Text |
... ns t r 1.5 ns t d(off) 18.5 ns turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =4.2 w , r gen =3 w turn-on delaytime gate-body leakage current forward transconductance diode forward voltage switching parameters gate resistan... |
| Description |
30V Dual N-Channel MOSFET
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| File Size |
389.48K /
5 Page |
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it Online |
Download Datasheet |
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Microsemi
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| Part No. |
APT8052BFLLG
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| OCR Text |
...ge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v... |
| Description |
FREDFETs
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| File Size |
149.21K /
5 Page |
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it Online |
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Microsemi
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| Part No. |
APT50GN60BDQ3G
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| OCR Text |
...e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ? gure 21, bu... |
| Description |
IGBT w/ anti-parallel diode
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| File Size |
231.31K /
9 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AOSP32320C
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| OCR Text |
...ate charge switching parameters turn-on delaytime v ds =0v, v gs =20v maximum body-diode continuous current input capacitance gate-body leakage current body diode reverse recovery charge body diode reverse recovery time i f =8.5a, di/dt=500... |
| Description |
Single LV MOSFETs (12V - 30V)
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| File Size |
295.67K /
5 Page |
View
it Online |
Download Datasheet |
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