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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
M466F0804DT1-L
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| OCR Text |
... ras to cas precharge time t rpc 5 5 ns access time from cas precharge t cpa 28 35 ns 3 hyper page mode cycle time t hpc 20 25 ns 10 hy...1,2.)
dram module m466f0804dt1-l rev. 0.1 oct. 2000 notes an initial pause of 200us is required a... |
| Description |
8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh
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| File Size |
300.63K /
20 Page |
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it Online |
Download Datasheet
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Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
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| Part No. |
IS45LV44002B-50JA1 IS45LV44002B-50JLA1
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| OCR Text |
...ss to ras lead time 25 ? ns t rpc ras to cas precharge time 5 ? ns t rsh ras hold time 8 ? ns t rhcp ras hold time from cas prechar...1-800-379-4774 7 rev. a 09/12/05 is45lv44002b issi ? ac characteristics (continued) (1,2,3,4,5,6)... |
| Description |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
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| File Size |
128.84K /
20 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
M372V0405DT0-CFASTPAGEMODE
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| OCR Text |
... ras to cas precharge time t rpc 3 3 ns 11 access time from cas precharge t cpa 35 40 ns 3,11 fast page mode cycle time t pc 35 40 ns f...1 oct. 2000 notes an initial pause of 200us is required after power-up followed by any 8 ras -only ... |
| Description |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet
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| File Size |
411.64K /
19 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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