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STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
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Part No. |
STP80N03L-06 4881
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Description |
N-Channel enhancement Mode "Ultra High Density" power mos Transistor(N沟道增强模式高密度功率MOS晶体管) N沟道增强模式“超高密度”功率mos晶体管(不适用沟道增强模式高密度功率马鞍山晶体管) N - CHANNEL enhancement MODE ULTRA HIGH DENSITY power mos TRANSISTOR N - CHANNEL enhancement MODE ULTRA HIGH DENSITY power mos TRANSISTOR From old datasheet system N - CHANNEL enhancement MODE "ULTRA HIGH DENSITY" power mos TRANSISTOR
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File Size |
76.52K /
5 Page |
View
it Online |
Download Datasheet |
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Advanced power Technology Ltd.
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Part No. |
APT10035B2FLL APT10035LFLL
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Description |
power mos 7 1000V 28A 0.350 Ohm power mos 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power mosFETS. power mos 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power mosFETS. Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-19 RoHS Compliant: No
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File Size |
63.75K /
2 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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