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CREE[Cree, Inc]
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| Part No. |
CGH35015F
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| OCR Text |
...ency at 2.0 W POUT 15 W Typical p3db WiMAX Fixed Access 802.16-2004 OFDM
*
Subject to change without notice. www.cree.com/wireless
Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter Drain-Source Vo... |
| Description |
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
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| File Size |
703.49K /
9 Page |
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it Online |
Download Datasheet
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CREE[Cree, Inc]
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| Part No. |
CGH40010
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| OCR Text |
...al Gain at 4.0 GHz 13 W typical p3db 65 % Efficiency at p3db 28 V Operation
APPLICATIONS
* * * * * 2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for OFDM, W... |
| Description |
10 W, RF Power GaN HEMT
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| File Size |
760.87K /
12 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CGH40025F
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| OCR Text |
...al Gain at 4.0 GHz 30 W typical p3db 62 % Efficiency at p3db 28 V Operation
APPLICATIONS
* * * * * 2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for OFDM, W... |
| Description |
25 W, RF Power GaN HEMT
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| File Size |
940.07K /
12 Page |
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it Online |
Download Datasheet |
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CREE[Cree, Inc]
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| Part No. |
CGH40045
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| OCR Text |
...al Gain at 4.0 GHz 55 W Typical p3db 55 % Efficiency at p3db 28 V Operation
APPLICATIONS
* * * * * 2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for OFDM, W... |
| Description |
45 W, RF Power GaN HEMT
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| File Size |
906.44K /
12 Page |
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it Online |
Download Datasheet |
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CREE[Cree, Inc]
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| Part No. |
CRF24010
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| OCR Text |
...VGS = -16 V, f = 1 MHz GSS P1dB p3db
Symbol
Min.
Typ.
Max.
Units
Conditions
VGS(th) VGS(Q) IDSS V(BR)DSS gm TC T
-12 - 1.2 100 140 -30 -
-10 -9 1.5 - 160 - -
- - 1.8 - - 125 60
VDC VDC A VDC mS C in-oz
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| Description |
10 W, SiC RF Power MESFET
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| File Size |
634.49K /
10 Page |
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it Online |
Download Datasheet |
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CREE[Cree, Inc]
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| Part No. |
CRF24060
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| OCR Text |
...Hz 60 W @ P1dB at 1500 MHz 80 W p3db at 1500 MHz
il 2007 Rev .2 - Apr
Note: Measured in amplifier circuit CRF24060-TB at VDS = 48 V, IDQ = 2000 mA.
Subject to change without notice. www.cree.com/wireless
Absolute Maximum Rat... |
| Description |
60 W, SiC RF Power MESFET
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| File Size |
542.87K /
10 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
EGN35A180IV
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| OCR Text |
p3db High Efficiency: 50%(typ.) @ p3db Linear Gain : 12.0dB(typ.) @ f=3.5GHz Proven Reliability
ES/EGN35A180IV
High Voltage - High Power GaN-HEMT
DESCRIPTION
Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater cons... |
| Description |
High Voltage - High Power GaN-HEMT
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| File Size |
103.92K /
4 Page |
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it Online |
Download Datasheet |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
ESN26A030MK EGN26A030MK
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| OCR Text |
p3db High Efficiency: 60%(typ.) @ p3db Linear Gain : 15.0dB(typ.) @ f=2.6GHz Proven Reliability
ES/EGN26A030MK
High Voltage - High Power GaN-HEMT
DESCRIPTION
Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater cons... |
| Description |
High Voltage - High Power GaN-HEMT
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| File Size |
99.98K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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