mos-controlled pdf Datasheet P8 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : 151TS TSV611 2N3904 4HC74A TSM4N60 151TS 78L06A DS28E15
	Product Description
	Full Text Search

mos-controlled Datasheet PDF File

For mos-controlled Found Datasheets File :: 4385 Search Time::1.688ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				MOTOROLA[Motorola, Inc]
Part No.	MRF141
OCR Text	... Unit C/W NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and pack...controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This fe...
Description	N-CHANNEL BROADBAND RF POWER MOSFET
File Size	159.11K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF151G
OCR Text	... Unit C/W NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and pack...controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This fe...
Description	N-CHANNEL BROADBAND RF POWER MOSFET
File Size	155.18K / 6 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	MRF173CQ
OCR Text	... (continued) NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and pack...controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This fe...
Description	N-CHANNEL BROADBAND RF POWER MOSFET
File Size	116.10K / 6 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF173 MRF173CQ
OCR Text	... (continued) NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and pack...controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This fe...
Description	N-CHANNEL BROADBAND RF POWER MOSFETs VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
File Size	105.50K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18030A MRF18030ALR3 MRF18030ALSR3
OCR Text	...3 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Rev. 6 MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA F...
Description	SEE A3282EUA-T CHOPPER STABILIZED LATCH W/TIN PLATING SEE A3282ELHLT-T RF Power Field Effect Transistors
File Size	504.66K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
OCR Text	...97 Unit C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA RF Motorola, Inc. 2002 DEVICE DATA MR...
Description	MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
File Size	399.98K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
OCR Text	...3 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA Fo...
Description	HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes RF Power Field Effect Transistors
File Size	486.59K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF18085B MRF18085BLSR3 MRF18085BR3
OCR Text	...otes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA For ...
Description	RF Power Field Effect Transistors
File Size	607.07K / 12 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	PCA1673 PCA1673U PCA1672 PCA1672U PCA1675 PCA1675U PCA1676 PCA1676U/10 PCA1677 PCA1677U
OCR Text	...autions appropriate to handling MOS devices. Advice can be found in "Data Handbook IC16, General, Handling MOS Devices". CHARACTERISTICS VDD = 1.55 V; VSS = 0 V; fosc = 32.768 kHz; Tamb = 25 C; crystal: RS = 20 k; C1 = 2 to 3 fF; CL = 8 to ...
Description	32 kHz watch circuits using a silver-oxide or a 3 V lithium battery
File Size	69.26K / 12 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	Q67100-H6278 PSB2120 PSB2120-T Q67100-H8645
OCR Text	...esistance junction - ambient MOS-Handling: The integrated SIPMOS-transistor (pin 9, 10 and 11) has to be protected against electrostatic charges. The input gate-source (pin 9 and pin 11) must be protected against 10 V. DC Characteristic...
Description	ISDN Remote Power Controller (IRPC)
File Size	291.61K / 20 Page	View it Online	Download Datasheet

For mos-controlled Found Datasheets File :: 4385 Search Time::1.688ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |