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TDA7430 XF001 EM951 E006988 MMBD248A 80CIL14B DS3882ET RGPP3D
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    Holtek Semiconductor Inc.
Part No. HT48C10-1
OCR Text .... software instructions deter - mine the cmos output or schmitt trigger input with a pull-high resistor (determined by pull-high op - tions). the external interrupt and timer input are pin-shared with the pc0 and pc1, respectively. the exte...
Description 8-Bit High Performance RISC-like Microcontroller Suitable for Multiple I/O Application(高性能、指令类似RISC位微控制器,用于多I/O接口设备)

File Size 276.96K  /  43 Page

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    HY5PS1G421M

Hynix Semiconductor
Part No. HY5PS1G421M
OCR Text ...g a precharge command to deter- mine whether the precharge applies to one bank (a10 low) or all banks (a10 high). if only one bank is to be precharged, the bank is selected by ba0, ba1. the address inputs also provide the op code during m...
Description (HY5PS1G421 / HY5PS1G821) 1Gb DDR2 SDRAM

File Size 1,196.71K  /  79 Page

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    Holtek Semiconductor Inc.
Part No. HT48R05A-1
OCR Text .... software instructions deter - mine the cmos output or schmitt trigger input with a pull-high resistor (determined by pull-high op - tions). the external interrupt and timer input are pin-shared with the pc0 and pc1, respectively. the exte...
Description 8-Bit High Performance RISC-like OTP Microcontroller(8位、高性能、类似RISC、一次可编程微控制器,用于多I/O接口设备)

File Size 293.34K  /  44 Page

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    K4H1G0838M-TC/LB0 K4H1G0838M-TC/LA2 K4H1G0838M-TC/LB3 K4H1G0438M-TC/LA2 K4H1G0438M-TC/LB0 K4H1G0438M-TC/LB3

SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H1G0838M-TC/LB0 K4H1G0838M-TC/LA2 K4H1G0838M-TC/LB3 K4H1G0438M-TC/LA2 K4H1G0438M-TC/LB0 K4H1G0438M-TC/LB3
OCR Text ...g a precharge command to deter- mine whether the precharge applies to one bank (a10 low) or all banks (a10 high). if only one bank is to be precharged, the bank is selected by ba0, ba1. the address inputs also provide the op-code during...
Description DIODE ZENER DUAL COMMON-CATHODE 300mW 43Vz 5mA-Izt 0.0698 0.1uA-Ir 32 SOT-23 3K/REEL
1Gb M-die DDR SDRAM Specification

File Size 208.27K  /  23 Page

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    K4H510738E-TC/LAA K4H510738E-TC/LB0 K4H510738E-TC/LA2 K4H510638E-TC/LB0 K4H510638E-TC/LA2 K4H510638E-TC/LAA

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H510738E-TC/LAA K4H510738E-TC/LB0 K4H510738E-TC/LA2 K4H510638E-TC/LB0 K4H510638E-TC/LA2 K4H510638E-TC/LAA
OCR Text ...g a precharge command to deter- mine whether the precharge applies to one bank (a10 low) or all banks (a10 high). if only one bank is to be precharged, the bank is selected by ba0, ba1. the address inputs also provide the op-code during...
Description Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD -40 to 125 堆叠12Mb电子芯片DDR SDRAM内存规格(x4/x8
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)

File Size 192.75K  /  22 Page

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    Advanced Micro Devices, Inc.
Part No. AM29LV033MUU101RFI AM29LV033MUU112EI AM29LV033MUU112REI AM29LV033MUU112RFI AM29LV033MUU112RWCI AM29LV033MUU112WCI AM29LV033MUU120EI AM29LV033MUU120FI AM29LV033MUU120REI AM29LV033MUU120RFI AM29LV033MUU120WCI AM29LV033MUU90EI AM29LV033MUU90RWCI AM29LV033MUU90REI AM29LV033MUU101EI AM29LV033MUU101RWCI
OCR Text ...usy# (ry/by#) output to deter- mine whether the operation is complete. to facilitate programming, an unlock bypass mode reduces com- mand sequence overhead by requiring only two write cycles to program data instead of four. the versatil...
Description    32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 32兆位个M × 8位)的MirrorBit 3.0伏特,只有统一闪存部门与VersatileI / O控制

File Size 758.84K  /  56 Page

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    http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4T51163QC-ZCE6 K4T51163QC-ZCLD5 K4T51163QC-ZLE7 K4T51163QC-ZLE6 K4T51163QC-ZCLD6 K4T51163QC-ZLD5 K4T51163QC-ZCLE6 K4T51163QC-ZCCC K4T51163QC-ZCD5 K4T51043QC-ZCD5 K4T51083QC-ZCD5 K4T51043QC-ZCCC K4T51043QC-ZCD6 K4T51083QC-ZCD6 K4T51043QC-ZCLE6 K4T51043QC-ZCLCC K4T51083QC-ZCE7 K4T51083QC-ZCCC K4T51043QC-ZCE6 K4T51043QC-ZCE7 K4T51043QC-ZLCC K4T51043QC-ZLD5
OCR Text ...ng a precharge command to deter mine whether the precharge applies to one bank (a10 low) or all banks (a10 high). if only one bank is to be precharged, the bank is selected by ba0, ba1. the address inputs also provide the op-code during mod...
Description 512Mb C-die DDR2 SDRAM 荤的512Mb芯片DDR2内存

File Size 632.03K  /  29 Page

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