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  isd-5 Datasheet PDF File

For isd-5 Found Datasheets File :: 11188    Search Time::1.609ms    
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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) 10us 10 TJ = 150 C I D , Drain Current (A) 10 100us 1ms 1 10ms 1 TJ = 25 C 0.1 0.2 V GS = 0 V 0.5 0.8 1.1 1.4 0.1 TC = 25 C TJ = 150 C Si...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text ... RG = 25 , Starting TJ = 25C 3. ISD 8.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2001 Fairchild Semiconductor Corporation ...
Description 500V N-Channel MOSFET

File Size 908.43K  /  10 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ...IAS = 8.0A. (See Figure 12) ISD 8.0A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C ** When mounted on 1" square PCB (FR-4 or G-10 Material)....5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source ...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

File Size 169.91K  /  10 Page

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    IRF9140

SEMELAB LTD
SEME-LAB[Seme LAB]
Part No. IRF9140
OCR Text ...= -18A , Starting TJ = 25C 3) @ ISD -18A , di/dt -100A/s , VDD BVDSS , TJ 150C , Suggested RG = 9.1 Semelab plc. Telephone (01455)...5.0 13 1.0 0.12 30 280 3.6 V / C V S (E) A nA -2 6.2 pF nC ns SOURCE - DRAIN DIOD...
Description P-CHANNEL POWER MOSFET

File Size 21.26K  /  2 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ...o Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G D MIN ...5 300 1.5 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9230 JANTXV2N6806 JANTX2N6806

IRF[International Rectifier]
Part No. IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text ... IL = -6.5A, Foot Notes: ISD -6.5A, di/dt -120A/s, VDD -200V, TJ 150C Suggested RG =7.5 Pulse width 300 s; Duty Cycle 2% Case Outline and Dimensions --TO-204AA (Modified TO-3) IR WORLD HEADQUARTERS: 233 Kansas St., El S...
Description TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
CAP CER 250VAC 82PF 5% SL 1808
6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 148.64K  /  7 Page

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    IRF9410

International Rectifier
Part No. IRF9410
OCR Text ...emperature. ( See fig. 11 ) ISD 4.6A, di/dt 120A/s, VDD V(BR)DSS, TJ 150C Starting TJ = 25C, L = 6.6mH RG = 25, IAS = 4.6A. ...5.5V 4.5V 4.0V 3.5V BOTT OM 3.0V TOP 100 I D , Dra in-to -S o u rce Cu rre n t (A ) 10 I...
Description Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

File Size 103.18K  /  7 Page

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ...o application note #AN-994. ISD -4.0A, di/dt -300A/s, VDD V(BR)DSS, IRF9520NS/L 100 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Curren...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

File Size 151.66K  /  10 Page

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ...emperature. ( See fig. 11 ) ISD -4.0A, di/dt -300A/s, VDD V(BR)DSS, TJ 175C Starting TJ = 25C, L = 18 mH RG = 25, IAS = -4.0A....5.5V -5.0V BOTTOM -4.5V TOP 100 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP ...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

File Size 91.94K  /  8 Page

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    IRF9520 FN2281

INTERSIL[Intersil Corporation]
Part No. IRF9520 FN2281
OCR Text ...o Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G D MIN ...5 - V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width...
Description 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET

File Size 57.36K  /  7 Page

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For isd-5 Found Datasheets File :: 11188    Search Time::1.609ms    
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