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ST Microelectronics, Inc. STMICROELECTRONICS[STMicroelectronics]
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Part No. |
STE70IE120
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OCR Text |
...nt VCE = 1200V (V BS = VGS = 0) ibs(OS) ISB(OS) IGS(OS) Base-source current (IC = 0, VGS = 0V) Source-base current (IC = 0, VGS = 0) Gate-source leakage VBS(OS) = 40V VSB(OS) = 10V VGS = 20V VGS = 10V_IC = 70A IB = 14A VGS = 10V_IC = 45A I... |
Description |
Monolithic Emitter Switched Bipolar Transistor ESBT? 1200 V - 70 A - 0.014 Ω Power Module Monolithic Emitter Switched Bipolar Transistor ESBT 1200V 70A 0.014Ohm Power Module Monolithic Emitter Switched Bipolar Transistor ESBT㈢ 1200 V - 70 A - 0.014 ヘ Power Module
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File Size |
127.05K /
7 Page |
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ST Microelectronics, Inc. STMICROELECTRONICS[STMicroelectronics]
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Part No. |
STC05DE120HV
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OCR Text |
...ified) Table 4.
Symbol ICS(SS) ibs(OS) ISB(OS) IGS(OS) VCS(ON) hFE VBS(ON) VGS(th) Ciss QGS(tot)
Electrical characteristics
Parameter Test Conditions Min. Typ. Max. 100 10 100 500 IB =1A 3 7 0.9 0.7 5 10 1.3 1 1.5 V GS=0V 2.2 750 12.5 ... |
Description |
Hybrid emitter switched bipolar transistor ESBT? 1200V - 5A - 0.18 ohm Hybrid emitter switched bipolar transistor ESBT 1200V 5A 0.18 Ohm Hybrid emitter switched bipolar transistor ESBT㈢ 1200V - 5A - 0.18 ohm
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File Size |
208.37K /
9 Page |
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it Online |
Download Datasheet
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Price and Availability
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