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For ibis Found Datasheets File :: 415 Search Time::1.563ms
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				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
Part No.	K4S280432A-TC_L75 K4S280432A-TC_L80 K4S280432A-TC/L10 K4S280432A-TC/L1H K4S280432A-TC/L1L K4S280432A-TC/L75 K4S280432A-TC/L80
OCR Text	...v. 0.0 Aug. 1999 K4S280432A ibis SPECIFICATION IOH Characteristics (Pull-up) Voltage (V) 3.45 3.3 3.0 2.6 2.4 2.0 1.8 1.65 1.5 1.4 1.0 0.0 100MHz Min I (mA) 100MHz Max I (mA) -2.4 -27.3 -74.1 -129.2 -153.3 -197.0 -226.2 -248.0 -269.7 ...
Description	128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
File Size	108.63K / 10 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
Part No.	K4S280432B-TC_L75 K4S280432B-TC_L80 K4S280432B K4S280432B-TC_L10 K4S280432B-TC_L1H K4S280432B-TC_L1L K4S280432B-TC/L80 K4S280432B-TC/L75 K4S280432B-TC/L1L K4S280432B-TC/L1H K4S280432B-TC/L10 K4S280432B-TC10
OCR Text	...v. 0.0 Aug. 1999 K4S280432B ibis SPECIFICATION IOH Characteristics (Pull-up) Voltage (V) 3.45 3.3 3.0 2.6 2.4 2.0 1.8 1.65 1.5 1.4 1.0 0.0 100MHz Min I (mA) 100MHz Max I (mA) -2.4 -27.3 -74.1 -129.2 -153.3 -197.0 -226.2 -248.0 -269.7 ...
Description	32M X 4 SYNCHRONOUS DRAM, 7 ns, PDSO54 128MBIT SDRAM 8M X 4BIT X 4 BANKS SYNCHRONOUS DRAM LVTTL
File Size	108.69K / 10 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
Part No.	K4S280432C-TC_L1H K4S280432C K4S280432C-TC_L1L K4S280432C-TC_L75 K4S280432C-TC/L1H K4S280432C-TC/L1L K4S280432C-TC/L75
OCR Text	...v. 0.0 Mar. 2000 K4S280432C ibis SPECIFICATION IOH Characteristics (Pull-up) Voltage (V) 3.45 3.3 3.0 2.6 2.4 2.0 1.8 1.65 1.5 1.4 1.0 0.0 100MHz 133MHz Min I (mA) 100MHz 133MHz Max I (mA) -2.4 -27.3 -74.1 -129.2 -153.3 -197.0 -226.2 ...
Description	128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
File Size	111.66K / 11 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S560432A K4S560432A-TC_L75 K4S560432A-TC_L80 K4S560432A-TC_L1H K4S560432A-TC_L1L K4S560432A-TC/L80 K4S560432A-TC/L1L K4S560432A-TC/L1H K4S560432A-TC/L75
OCR Text	...v. 0.0 Sep. 1999 K4S560432A ibis SPECIFICATION IOH Characteristics (Pull-up) Voltage (V) 3.45 3.3 3.0 2.6 2.4 2.0 1.8 1.65 1.5 1.4 1.0 0.0 100MHz Min I (mA) 100MHz Max I (mA) -2.4 -27.3 -74.1 -129.2 -153.3 -197.0 -226.2 -248.0 -269.7 ...
Description	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM16米x 4位4银行同步DRAM LVTTL 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6米x 4位4银行同步DRAM LVTTL
File Size	126.16K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S560432B-TC_L1H K4S560432B-TC_L1L K4S560432B-TC_L75 K4S560432B K4S560432B-TC/L75 K4S560432B-TC/L1L K4S560432B-TC/L1H
OCR Text	..."Preliminary" * Add "133MHz" in ibis SPECIFICATION Rev. 0.2 May.2000 K4S560432B 16M x 4Bit x 4 Banks Synchronous DRAM FEATURES * JEDEC standard 3.3V power supply * LVTTL compatible with multiplexed address * Four banks operation * ...
Description	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6x 4位4银行同步DRAM LVTTL
File Size	128.98K / 11 Page	View it Online	Download Datasheet

				Integrated Circuit Systems
Part No.	ICS95V860 ICS95V860YHLF-T
OCR Text	...V(CLKC) ICS95V860 GND Figure 1. ibis Model Output Load VDD/2 ICS95V860 Z = 60 C = 12 pF -V DD/2 R = 10 Z = 50 SCOPE R = 50 V(TT) Z = 60 R = 10 Z = 50 C = 12 pF -VDD/2 -VDD/2 NOTE: V(TT) = GND Figure 2. Output Load Test Circuit R = ...
Description	2.5V DDR/Zero Delay Fan Out Buffer (100MHz - 225MHz)
File Size	81.88K / 10 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H561638H-UI_PCC K4H561638H-UI_PB3 K4H561638H-UI_PB0 K4H561638H-ZI_PB3 K4H561638H K4H561638H-ZI_PB0
OCR Text	...........................20 23.0 ibis : I/V Characteristics for Input and Output Buffers ........................................................21 Rev. 1.2 January 2006 K4H561638H Revision History Revision 1.0 1.1 1.2 Month May Septe...
Description	256Mb H-die DDR SDRAM Specification
File Size	405.70K / 24 Page	View it Online	Download Datasheet

				ICS Integrated Circuit Systems
Part No.	ICS97ULP844AHLF-T ICS97ULP844AH-T ICS97ULP844A
OCR Text	...CLKC) ICS97ULP844 GND Figure 1. ibis Model Output Load VDD/2 ICS97ULP844A Z = 60 Z = 2.97" Z = 120 Z = 60 Z = 2.97" C = 10 pF GND -VDD/2 Figure 2. Output Load Test Circuit R = 1M V(TT) C = 1 pF R = 1M V(TT) C = 1 pF C = 10 pF - GND R = ...
Description	1.8V Low-Power Wide-Range Frequency Clock Driver
File Size	129.96K / 12 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4H2G0638A-UC_LCC K4H2G0638A-UC_LB0 K4H2G0638A-UC_LB3 K4H2G0638A-UC_LA2 K4H2G0638A-UC
OCR Text	...........................19 23.0 ibis : I/V Characteristics for Input and Output Buffers ........................................................20 Rev. 0.0 June. 2005 DDR SDRAM stacked 2Gb A-die (x4) Revision History Revision 0.0 Mo...
Description	Stacked 2Gb A-die SDRAM Specification
File Size	342.07K / 23 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H1G0438A-UC_LA2 K4H1G0438A-UC_LCC K4H1G0438AUC_LB3 K4H1G0438A K4H1G0438A-UC_LB0 K4H1G0838AUC_LB0 K4H1G0838A K4H1G0838A-UC_LA2 K4H1G0838A-UC_LB3 K4H1G0838A-UC_LCC
OCR Text	...........................20 23.0 ibis : I/V Characteristics for Input and Output Buffers ........................................................21 Rev. 1.1 January 2007 K4H1G0438A K4H1G0838A DDR SDRAM Year 2006 2007 - First releas...
Description	1Gb A-die SDRAM Specification
File Size	355.95K / 24 Page	View it Online	Download Datasheet

For ibis Found Datasheets File :: 415 Search Time::1.563ms
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