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hdmostm Datasheet PDF File

For hdmostm Found Datasheets File :: 357 Search Time::1.141ms
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				IXYS, Corp. IXYS[IXYS Corporation]
Part No.	IXTP01N100D IXTP01N100
OCR Text	... Normally ON mode Low RDS (on) hdmostm process Rugged polysilicon gate cell structure Fast switching speed 1.6 mm (0.063 in.) from case for 10 s 300 1 Applications l l Level shifting Triggers Solid state relays Current regulat...
Description	High Voltage MOSFET 0.1 A, 1000 V, 110 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AD From old datasheet system
File Size	50.58K / 2 Page	View it Online	Download Datasheet

				IXYS Corporation IXYS, Corp.
Part No.	IXTM13N80NBSP IXTH13N80NBSP IXTH11N80 IXTM13N80 IXTH13N80 IXTM11N80
OCR Text	... standard packages Low RDS (on) hdmostm process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25C, unle...
Description	MegaMOSFET From old datasheet system MegaMOSFET 13 A, 800 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA MegaMOSFET 13 A, 800 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
File Size	98.47K / 4 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXTH40N30NBSP IXTH40N30 IXTM40N30
OCR Text	... standard packages Low RDS (on) hdmostm process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from ...
Description	N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.088Ω的N沟道增强B>MegaMOSFET) N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.085Ω的N沟道增强B>MegaMOSFET) From old datasheet system N-Channel Enhancement MOSFET
File Size	106.84K / 4 Page	View it Online	Download Datasheet

				Directed Energy IXYS[IXYS Corporation]
Part No.	DEIC420
OCR Text	... compatibility of CMOS and IXYS hdmostm processes * Latch-Up Protected * High Peak Output Current: 20A Peak * Wide Operating Range: 8V to 30V * Rise And Fall Times of <4ns * Minimum Pulse Width Of 8ns * High Capacitive Load Drive Capability...
Description	20 Ampere Low-Side Ultrafast RF MOSFET Driver
File Size	154.93K / 7 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXGH20N30
OCR Text	... capability * Newest generation hdmostm process * MOS Gate turn-on - drive simplicity Applications * * * * * AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode p...
Description	HiPerFAST IGBT
File Size	33.88K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFR180N10NBSP IXFR180N10
OCR Text	...pacitance(<25pF) * Low RDS (on) hdmostm process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Fast intrinsic Rectifier Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-...
Description	Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs ISOPLUS247 From old datasheet system
File Size	32.32K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation] ETC
Part No.	IXGH25N120A IXGH25N120
OCR Text	... JEDEC TO-247 AD 2nd generation hdmostm process Low VCE(sat) - for low on-state conduction losses MOS Gate turn-on - drive simplicity l l l l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min....
Description	Low VCE(sat) High speed IGBT
File Size	42.93K / 2 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXGH25N120
OCR Text	... JEDEC TO-247 AD 2nd generation hdmostm process Low VCE(sat) - for low on-state conduction losses MOS Gate turn-on - drive simplicity l l l l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min....
Description	Low VCE(sat) High speed IGBT
File Size	35.72K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXSH25N120A
OCR Text	... C Features * Second generation hdmostm process Low VCE(sat) - for minimum on-state conduction losses * MOS Gate turn-on - drive simplicity Applications 1.15/10 6 300 Symbol Test Conditions Characteristic Values (T J = 25C unles...
Description	IGBT
File Size	31.69K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXTH35N30
OCR Text	... standard packages Low RDS (on) hdmostm process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from ...
Description	MegaMOSTMFET
File Size	106.85K / 4 Page	View it Online	Download Datasheet

For hdmostm Found Datasheets File :: 357 Search Time::1.141ms
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